JOURNAL OF
CRYSTAL GROWTH
vol:196, no:1, january 1999

Classical semiconductors
The growth of epitaxial aluminium on As containing
compound semiconductors
S.J. Pilkington and M. Missous I

AllnP benchmarks for growth of AIGalnP compounds
by organometallic vapor-phase epitaxy
K.A. Bertness, S.R. Kurtz, S.E. Asher and R.C.
Reedy, Jr. 13

Insensitivity of self-formed quantum dots to substrate
surface roughness
D. Pan, J. Xu and E. Towe 23

Beryllium doping and silicon amphotericity in (1 1 0)
GaAs-based heterostructures: structural and optical
properties
J. Xu, E. Towe, Q. Yuan and R. Hull 26

Metal organic vapour phase epitaxial growth and char-
acterization of (Galn)P layers grown with different
P-containing precursors
1. Pietzonka, R. Franzheld, T. SaB, G. Benndorf,
R. Schwabe, M. Handschuh and V. Gottschalch 33

Relation between GaAs surfabe morphology and incor-
poration of hexagonal GaN into cubic GaN
H. Tachibana, T. Ishido, M. Ogawa, M. Funato,
Sz. Fujita and Sg. Fujita 41

Synthesis of gallium nitride by ammonia injection into
gallium melt
M. Shibata, T. Furuya, H. Sakaguchi and S. Kuma 47

A study of the vacancy-defect distribution in a GaAs/
AIxGa1 -xAs multi-layer structure grown at low temper-
ature
S. Fleischer, C. Surya, Y.F. Hu, C.D. Beling, S. Fung,
T.L. Smith, K..M. Moulding and M. Missous 53

Finite element analysis of dislocation density during bulk
single crystal growth (effect of doping atoms in InP single
crystal)
N. Miyazaki and Y. Kuroda 62
Miscibility gap calculation for Ga1-xlnxNyAs1-y includ-
ing strain effects
D. Schlenker, T. Miyamoto, Z. Pan, F. Koyama and
K, Iga 67

Synthesis and growth of PbTe crystals at low temper-
ature and their characterization
V. Munoz, A. Lasbiey, S. Klotz and R. Triboulet 71

The growth of ZnSe by photo-assisted metalorganic
chemical vapor deposition (MOCVD)
G. Yu, X.W. Fan, J.Y. Zhang, B.J. Yang, X. Zhao,
D.ShenandY.M.Lu 77

Growth of ZnSe single crystal by CVT method with
self-moving convection shield
S. Fujiwara, Y. Namikawa, Y. Hirota, M. Irikura, K.
Matsumoto and T. Kotani 83

High-quality silicon/insulator heteroepitaxial structures
formed by molecular beam epitaxy using Al2O3 and Si
Y.-C. Jung, H. Miura, K. Ohtani and M. Ishida 88

Er doping of Si and Sio.88Geo.12 using Er2O3 and ErF3
evaporation during molecular beam epitaxy. A transmis-
sion electron microscopy study
K.B. Joelsson, L. Hultman, W.X. Ni, J. Cardenas,
B.G, Svensson, E. Olsson and G.V. Hansson 97
Study on the oxygen concentration reduction in heavily
Sb-doped silicon
C. Liu, H, Wang, Y. Li, Q. Wang, B. Ren, Y. Xu and
D. Que ' 111

Prediction of concentration profile for P doping in Si
gas-source molecular beam epitaxy
F. Hirose and H. Sakamoto 115

Electronic materials
High temperature superconducting thin films on
CaGdAlO4 substrates
V. Kleptsyn, V. Guenrikhson, V. Lisauskas,
R. Butkute, B. Vengalis, S. Samojlenkov, 0. Gor-
benko and A. Kaul 122
Continuous and time-resolved photolurninescence study
of lead slilfide nanocrystals, embedded in polymer film
E. Lilsintz. M. Sirota and 11. Poi-tcanu 126

Optical determination of the size distribution of CuCI
nanocrystals in NaCI
M. Haselhoff, K. Reimann and H.-J. Weber 135

Structural evolution of lithium niobate deposited on sap-
phire (0001): from early islands to continuous films
F. Veignant, M. Gandais, P. Aubert and G. Garry 141

The dependence of cobalt concentration on the growth
temperature in synthetic blue quartz
Y.K.LeeandS.J.Chung 151

Solution growth; industrial, biological and molecular crystalli-
zation
Impurity effect of iron(III) on the growth of potassium
sulfate crystal in aqueous solution
N. Kubota, K.-i. Katagiri, M. Yokota, A. Sato,
H.YashiroandK.ltai 156
Formation, growth and dissociation of clathrate hydrate
crystals in liquid water in contact with a hydrophobic
hydrate-forming liquid
R. Ohmura, T. Shigetomi and Y.H. Mori 164

The influence of additives on the crystal habit of gibbsite
1. Seyssiecq, S. Veesler. G. Pepe and R. Boistelle 174

Letter to the Editors

Study of some K2W207-KGd1-xLnx(WO4)2 systems to
be used for flux growth of doped KGd(WO4)2 single
crystals

M. Manuilov, V. Nikolov, G. Gentscheva and
P. Peshev 181

JOURNAL OF CRYSTAL GROWTH

VOL. 196 , NO . 2-4

SECTION 1. SOLUTION PROPERTIES

Protein interactions in concentrated ribonudease solutions

M. Boyer, M.-O. Roy, M. Jullien, F. Bonnete and A. Tardieu 185
Proteins in solution : from X-ray scattering intensities to interaction potentials

A. Tardieu, A. Le Verge. M. Malfois, F. Bonnete, S. Finet, M. Ries-Kautt and L. Belloni 193
Solubility of tetragonal and orthorhombic lysozyme crystals under high pressure

G. Sazaki, Y. Nagatoshi, Y. Suzuki, S.D. Durbin, S. Miyashita, T. Nakada and H. Komatsu 204
Interactions in solution of a large oligomeric protein
M. Budayova, F. Bonnete, A. Tardieu and P. Vachette 210

SECTION II. NUCLEATION

Kinetics of protein crystal nucleation and growth in the batch method
J.K. Baird. S.C. Hill and J.C. Clunie 220

Heterogeneous nucleation (and adhesion) of lysozyme crystals
D. Tsekova, S. Dimitrova and C.N. Nanev 226

A statistical understanding of nucleation
A.F. Izmailov, A.S. Myerson and S. Arnold 234

Identifying nucleation temperatures for lysozyme via differential scanning calorimetry
P.A. Darcy and J.M. Wiencek 243

SECTION III. CRYSTAL GROWTH

Epitaxial jumps
E.A. Stura, J.-B. Charbonnier and M.J. Taussig 250

Nonlinear dynamics of layer growth and consequences for protein crystal perfection
P.G. Vekilov, F. Rosenberger. H. Lin and B.R. Thomas 261

Packing motifs as predictors of the propensity of antibody fragments to crystallize
A.B. Edmundson, C.R. DeWitt. B.Z. Goldsteen and P.A. Ramsiand 276

Incorporation of impurity to a tetragonal lysozyme crystal
K. Kurihara, S. Miyashita, G. Sazaki, T. Nakada, S. Durbin, H. Komatsu, T. Ohba and K. Ohki 285

Crystal growth and solubility studies of AspergiHus niger acid proteinase A in the presence of both a salt and an organic solvent
T. Soga. H. Sasaki, M. Tanokura and M. Ataka 291

Characterization and crystallization of the Endoglucanase A from Clostridium Cellulolyticum in solution
M. Budayova, J.-P. Astier, S. Veesler, M. CzJzek, A. Belaich and R. Boistelle 297

Crystallization of multiple forms of bovine seminal ribonudease in the liganded and unliganded state
F. Sica, S. Adinolfi, R. Berisio, C. De Lorenzo, L. Mazzarella, R. Piccoli, L. Vitagliano and A. Zagari 305

Crystal growth and preliminary X-ray study of glutamic acid specific serine protease from Bacillus intermedius
I.P. Kuranova, E.V. Blagova, V.M. Levdikov, G.N. Rudenskaya, N.P, Balaban and E.V. Shakirov 313

Effect of a magnetic field on the orientation of hen egg-white lysozyme crystals
S.-i. Yanagiya, G. Sazaki, S.D. Durbin, S. Miyashita, T. Nakada, H. Komatsu, K. Watanabe and M. Motokawa 319

Orientation of protein crystals grown in a magnetic field
S. Sakurazawa, T. Kubota and M. Ataka 325

Crystallization of chicken egg white lysozyme from assorted sulfate salts
E.L. Forsythe, E.H. Snell, C.C. Malone and M.L. Pusey 332

Crystallization of human low density lipoprotein (LDL), a large lipid-protein complex. Collection of X-ray data at very low
resolution
S. Ritter, K. Diederichs, 1. Frey, A. Berg, J. Keui and M.W. Baumstark 344

Crystallization of recombinant cydo-oxygenase-2
A.M. Stevens, J.L. Pawlitz, R.G. Kurumbail, J.K. Gierse, K.T. Moreland, R.A. Stegeman, J.Y. Loduca and W.C. Stallings 350
Human 17p-hydroxysteroid dehydrogenase-Jigand complexes: crystals of different space groups with various cations and
combined seeding and co-crystallization
D.-W. Zhu, Q. Han, W. Qiu, R.L. Campbell, B.-X. Xie, A. Azzi and S.-X. Lin 356

Additives for the crystallization of proteins and nucleic acids
C. Sauter, J.D. Ng, B. Lorber, G. Keith, P. Brion, M.W. Hosseini, J.-M. Lehn and R. Giege 365

SECTION IV. PHYSICAL CHEMISTRY

Why is the osmotic second virial coefficient related to protein crystallization?
B.L. Neal, D. Asthagiri, O.D. Velev, A.M. Lenhoffand E.W. Kaler 377

understanding protein crystallization on the basis of the phase diagram
C. Haas and J. Drenth 388

Protein-solvent and weak protein-protein interactions in halophiiic malate dehydrogenase
C. Ebel, P. Faou and G. Zaccai 395

Second virial coefficient: variations with lysozyme crystallization conditions
F. Bonnete, S. Finet and A. Tardieu 403

Interactions in protein solutions near crystallisation: a colloid physics approach
R. Piazza 415

Correlation of second virial coefficients and solubilities useful in protein crystal growth
B. Guo, S. Kao, H. McDonald, A. Asanov, L.L. Combs and W.W. Wilson 424

SECTION V. CRYSTALLIZATION TECHNIQUES

Crystallization with oils: a new dimension in macromolecular crystal growth
N.E. Chayen 434

Influence of various factors on the liquid/liquid diffusion crystallization of proteins
H.-X. Gang and R.-C. Bi 442

Microbatch macromolecular crystallization on a thermal gradient
J.R. Luft, D.M. Rak and G.T. DeTitta 447

Microbatch macromolecular crystallization in micropipettes
J.R. Luft, D.M. Rak and G.T. DeTitta 450

SECTION VI. MICROSCOPY

Two-dimensional crystallization of proteins on lipid monolayers at the air-water interface and transfer to an electron microscopy
grid
A. Brisson, W. Bergsma-Schutter, F. Oling, 0. Lambert and 1. Reviakine 456

In situ atomic force microscopy studies of surface morphology, growth kinetics, defect structure and dissolution in macromolecu-
lar crystallization
A.J. Malkin, Yu.G. Kuznetsov and A. MePherson 471

AFM studies of the nucleation and growth mechanisms of macromolecular crystals
Yu.G. Kuznetsov, A.J. Malkin and A. MePherson 489

Direct AFM observations of impurity effects on a lysozyme crystal
T. Nakada, G. Sazaki, S. Miyashita, S.D. Durbin and H. Komatsu 503


SECTION VIL CRYSTAL QUALITY

X-ray diffraction studies of protein crystal disorder
1. Dobrianov, C. Caylor, S.G. Lemay, K.D. Finkelstein and R.E. Thorne 511

Estimates of internal stress and related mosaicity in solution grown crystals: proteins
A.A. Chernov

Probing the quality of crystals of biological macromolecules using maximum resolution of diffraction data, Bragg reflection I
profiles and X-ray topographs
R. Fourme, A. Ducruix, M. Ries-Kautt and B. Capelle 535

Topography and high resolution diffraction studies in tetragonal lysozyme
F. Otalora, J.M. Garcia-Ruiz, J.A. Gavira and B. Capelle 546

Crystalline quality of lysozyme crystals grown in agarose and silica gels studied by X-ray diffraction techniques
0. Vidai, M.C. Robert, B. Arnoux and B. Capelle 559

SECTION VIII. MICROGRAVITY

The effects of microgravity on protein crystallization: evidence for concentration gradients around growing crystals
A. MePherson, A.J. Malkin, Yu. G. Kuznetsov, S. Koszelak, M. Wells, G. Jenkins, J. Howard and G. Lawson 572

Investigations on gravity influence upon protein crystallization by the gel acupuncture technique
A. Moreno. L.A. Gonzalez-Ramirez, M. de los Angeles Hernandez-Hernandez, C. Oliver-Salvador, M. Soriano-Garcia and A.
Rodriguez-Romero 587

A crystal of a typical EF-hand protein grown under microgravity diffracts X-rays beyond 0.9 A resolution
J.-P. Declercq, C. Evrard, D.C. Carter, B.S. Wright, G. Etienne and J. Parello 595

Diffusion-controlled crystallization apparatus for microgravity (DCAM): flight and ground-based applications
D.C. Carter, B. Wright, T. Miller, J. Chapman, P. Twigg, K. Keeling, K. Moody, M. White, J. Click, J.R. Ruble, J.X. Ho, L.
Adcock-Downey, G. Bunick and J. Harp 602

PCAM: a multi-user facility-based protein crystallization apparatus for microgravity

D.C. Carter, B. Wright, T. Miller, J. Chapman, P. Twigg, K. Keeling, K. Moody, M. White, J. Click, J.R. Ruble, J.X. Ho, L.
Adcock-Downey, T. Dowling, C.-H. Chang, P. Ala, J. Rose, B.C. Wang, J.-P. Declercq, C. Evrard, J. Rosenberg, J.-P. Wery,
D. Clawson, M. Wardell, W. S tailings and A. Stevens 610
Lower dimer impurity incorporation may result in higher perfection of HEWL crystals grown in microgravity. A case study
D.C. Carter, K. Lim, J.X. Ho, B.S. Wright, P.D. Twigg, T.Y. Miller, J. Chapman, K. Keeling, J. Ruble, P.G. Vekilov, B.R.
Thomas, F. Rosenberger and A.A. Chernov 623
The Protein Crystallization Diagnostics Facility, a new European instrument to investigate biological macromolecular crystal
growth on board the International Space Station

V. Pletser, J. Stapelmann, L. Potthast and R. Bosch

__________________________

JOURNAL OF CRYSTAL GROWTH

VOL 203 , NOS1/2 (1999)

Classical semicooduftors

Hydride vapour-phase epitaxy growth and cath-
odoluminescence characterisation of thick: GaN films
T. Paskova, E.M. Goldys and B. Monemar.........................................................1

In situ optical monitoring of the decomposition of GaN
thin films
A. Rebey, T. Boufaden and B. El Jani.................................................................12

Novel InGaAs contact layer growth for hetero-junction
bipolar transistors (HBTs) by using the multiple group-V
source molecular beam epitaxy (MBE) system
K. Kadoiwa, S. lzumi, Y. Yamamoto, N. Hayafuji
andT.Sonoda.......................................................................................................18

Interface supersaturation in microchannel epitaxy of InP
Z. Yan, S. Naritsuka and T. Nishinaga................................................................. 25

Deep-level transient spectroscopy characterization of
lno.4aGao.52P grown at different V/lll ratio using a val-
ved phosphorus cracker cell in solid source molecular
beam epitaxy
S.F.Yoon,P.Y.LuiandH.Q.Zheng...........................................................................31

Scanning electron microscope studies of cubic
AI,Gai -,N films grown on GaAs(l 0 0) by metal organic
vapor phase epitaxy (MOVPE)
D.P. Xu, H. Yang, D.G. Zhao, J.B. Li, L.X. Zheng,
Y.T. Wang, S.F. Li, L.H. Duan and R.H. Wu ....................................................... 40

Reflection high-energy electron diffraction (RHEED)
oscillations in phase-locked epitaxy of ZnSe
J. Griesche and K. Jacobs ...................................................................................... 45

Lattice parameters and optical characterization of
Cd1-xMgxSe alloys grown by vertical gradient freezing
technique
1. Miotkowski, R. Vogelgesang, H. Alawadhi,
M.J. Seong, A.K. Ramdas, S. Miotkowska and W.
Paszkowicz ..............................................................................................................51

Influence of a compressive strain on the stoichiometry of
the (00 l)CdTe surface during molecular beam epitaxy
L. Carbonell, G. Mula and S. Tatarenko .................................................................. 61

Effects of pulling rate fluctuation on the interstitial-
vacancy boundary formation in CZ-Si single crystal
B.M. Park, G.H. Seo and G. Kirn ............................................................................67

Temperature dependence of the density of molten germa-
nium and silicon measured by a newly developed
Archimedian technique
H. Nakanishi, K. Nakazato, K. Abe, S. Maeda and K.
Terashima .................................................................................................................. 75

Characterization of gas-source molecular beam epitaxial
growth of strain-compensated Sii-,-„Ge,Cy/Si(001)
heterostructure
T. Akane, M. Sano, H. Okumura, Y. Tubo, T.
Ishikawa and S. Matsumoto ...................................................................................... 80

Effect of steady crucible rotation on segregation in high-
pressure vertical Bridgman growth of cadmium zinc
telluride
A. Yeckel, F.P. Doty and J.J. Derby ............................................................................ 87

Electronic materials
Gold films epitaxially grown by diffusion at the 3C-SiC/
Si interface
Ph. Komninou, J. Stoemenos, G. Nouet and Th.
Karakostas ......................................................................................................... 103

Copper selenide thin films by chemical bath deposition
V.M. Garcia, P.K. Nair and M.T.S. Nair ......................................................................1 1 3

In situ reflection high-energy electron diffraction
RHEED) observation of Bi2Te3/Sb.iTe3 multilayer film
growth
Y. lwata, H. Kobayashi, S. Kikuchi, E. Hatta and K.
Mukasa ........................................................................................................................125

Icosahedral phase growth in chill cast TieBFeigSu alloy
Y.C. Liu, G.S. Song, G.C. Yang and Y.H. Zhou ....................................................... 131

Growth mechanism of vapor-liquid-solid (VLS) grown
ndium tin oxide (ITO) whiskers along the substrate
H. Yumoto, T. Sako, Y. Gotoh, K. Nishiyama and T.
Kaneko ...........................................................................................................................136

chemical transport phenomena in the ZnO-Ga2o3 sys-
tem
G.R. Patzke, S. Loemelis, R. Wartchow and M.
Binnewies ..........................................................................................................................141

Top-seeded growth of bismuth triborate BiB3O6
P. Becker, J. Liebertz and L. Bohaty 149
Ni2+ distribution in BaLiF3 crystals prepared by the

zone-melting technique
A.M.E. Santo, S.P. Morato and S.L. Baldochi 156

The growth of Cr4+,Yb3+: yttrium aluminum garnet
(YAG) crystal and its absorption spectra properties
Dong Jun, Deng Peizhen and Xu Jun 163

Studies on the growth and defects of GdCa,i.O(B03)3
crystals
Zhang Shujun, Zhang Jiguo, Cheng Zhenxiang, Zhou
Guangyong, Han Jianru and Chen Huanchu 168

Liquid-phase epitaxial growth ofZn-doped LiNbO3 thin
films and optical damage resistance for second-harmonic
generation
T. Kawaguchi, K. Mizuuchi, T. Yoshino, M. Imaeda,
K. Yamamoto and T. Fukuda 173

Opposite domain formation in Er-doped LiNbC)3 bulk
crystals grown by the off-centered Czochralski technique
V. Bermudez, M.D. Serrano, P.S. Dutta and E.
Dieguez 179

Solution growth; industrial, biological and molecular crystalli-
zation
Growth mechanism and growth habit of oxide crystals
W.-J. Li, E.-W. Shi, W.-Z. Zhong and Z.-W. Yin 186

Kinetic effects of impurities on the growth of single
crystals from solutions
K. Sangwal 197

Adsorbate effects on glycothermally produced alfa-
alumina particle morphology
N.S. Bell and J.H.Adair 213

Concentration distribution in solution crystal growth:
effect of moving interface conditions
W. Wang and W.R. Hu 227

Kinetics of dissolution of triclinic calcium pyrophos-
phate dihydrate crystals
M.R. Christoffersen, N. Seierby, T.B. Zunic and J.
Christoffersen 234

General subjects
Tip-splitting crystal growth observed in crystallization
from thin films of poly(ethylene terephthalate)
Y. Sakai, M. Imai, K. Kaji and M. Tsuji 244

Influence of the nature of metals on the formation of the
deposit's polyci-ystalline structure during electrocrystall-
ization
V.M. Kozlov and L.P. Bicelli 255

Effect of liquid bridge volume on the instability in small-
Prandti-number half zones
Q.-S. Chen, W.-R. Hu and V. Prasad 261

Surface diffusion contribution to dendrite sidebranching
during growth of 2D Kossel crystal from the vapor
S. Krukowski and J.C. Tedenac 269

Effects of ampoule rotation on vertical zone-melting
crystal growth: steady rotation versus accelerated cru-
cible rotation technique (ACRT)
C.W. Lan and J.H. Chian 286

JOURNAL OF RYSTAL GROWTH
Volume 204 , Number 1- 2 1999




CONTENT

Classical semiconductors

Surface morphology, electrical and optical properties of
ln( 0.53 ) Ga(0.47) As/lnP grown by metalorganic vapor-phase
epitaxy using trirnethylarsine and arsine
H. Durnont, L. Auvray, J. Dazord, Y. Monteil, J. Bouix
and A. Ougazzaden 1


Dependence of carbon incorporation on growth condi-
tions for unintentionally doped AIGaAs during metal-
organic vapor-phase epitaxy
K. Fujii, M. Satoh, K. Kawamura and H. Gotoh 10



Raman and optical transmission spectra of GaSb-SiOz
composite films fabricated by radio frequency magnetron
co-sputtering
F. Liu and L. Zhang 19



Self-assembled InAs and Ino( 0.9) Al(0.10 As quantum dots on
(00 l)lnP substrates grown by molecular beam epitaxy
(MBE)
Sun Zhongzhe, Liu Fengqi, Ding Ding, Xu Bo and
Wang Zhanguo 24



Diethyidisulphide as sulphur precursor for the low tem-
perature metalorganic vapour-phase epitaxy of ZnS:
growth, morphology and cathodoluminescence results
P. Prete, N. Lovergine, M. Mazzer, C. Zanotti-
Fregonara and A.M. Mancini 29


Tilt angles at the CdTe/Cd( 1-y ) Te, Hg( 1-x ) ,Cd(x) Te/
CdTe, CdTe/GaAs heterojunctions grown by molecular
beam epitaxy
Fuju Yu 35



Point defect distributions in ZnSe crystals: effects of
gravity vector orientation during physical vapor trans-
port growth
C.-H. Su, S. Feth, D. Hirschfeld, T.M. Smith, L.J.
Wang, M.P. Volz and S.L. Lehoczky 41



Observation of nanometer silicon clusters in the hot-
filament CVD process
W.S. Cheong, N.M. Hwang and D.Y. Yoon 52

Electronic materials

Film orientation, growth parameters and growth modes
in epitaxy of YBa( 2) Cu( 3) O (x)
C. Klemenz, 1. Utke and H.J. Scheel 62


Textured crystal growth of Bi(Pb)2212 bulk ceramics in
high magnetic field
W.P. Chen, H. Maeda, K. Kakimoto, P.X. Zhang,
K. Watanabe, M. Motokawa, H. Kumakura and K. Itoh 69


Characterization and superconducting properties of
(Sm/Y)-Ba-Cu-0 composite oxides by top-seeded melt
growth in air
S.-J. Kirn, K.-W. Lee and H.-G. Kirn 78


Evidence of nanometer-sized charged carbon clusters in
the gas phase of the diamond chemical vapor deposition
(CVD) process
N.M. Hwang 85


Effect of antimony concentration on the electrical and
thermoelectrical properties of(Bi (1) -(x) Sb(x) )2Te3 thin films
grown by metal organic chemical vapour deposition
(MOCVD) technique
A. Giani, A. Boulouz, B. Aboulfarah, F. Pascal-
Delannoy, A. Foucaran, A. Boyer and A. Mzerd 91


Effects of rapid thermal annealing on electron beam
evaporated SrS : Ce thin film electroluminescent devices
made in H2S ambient
D. Wauters, D. Poelman, R.L. Van Meirhaeghe and
F. Cardon 97


Czochralski growth of NiAl single crystals: effect of cru-
cible support/insulation material
X. Fan and S. Kou 108


Compositional plane and properties of solid solution
semiconductor Pb(1) -xCax S(1- y ) Se(y) for mid-infrared lasers
S. Abe and K. Masumoto 115


Crystal growth of low-dimensional oxides related to the
2-H perovskite structure in K(2) CO(3) fluxes
W.H. Henley, J.B. Claridge, P.L. Smallwood and
H.-C. zur Loye 122



Czochralski growth and characterization of piezoelectric
single crystals with langasite structure: La (3) Ga(5) SiO(14)
(LGS), La(3) Ga(5.5) Nb(0.5) O(14) (LGN), and La(3) Ga(5.5)
Ta(0.5) O(14) ( LGT). Part I
J. Bohm, R.B. Heimann, M. Hengst, R. Roewer and
J. Schindler 128

Microstructure and orientation relations of
BaTiO(3) /MgO/YSZ multilayers deposited on Si(001)
substrates by laser ablation
C.H. Lei, C.L. Jia, M. Siegert, J. Schubert, Ch. Buchal
and K. Urban 137



Growth by the mo - pulling - down method and spectro-
scopic investigation of Nd(3+) -doped calcium niobium
gallium garnet
A. Brenier, G. Boulon, K. Shimamura and T. Fukuda 145



Scatterers in lithium tetraborate single crystals
T. Sugawara, R. Komatsu and S. Uda 150
Growth of Y(3) AI (5) O (12) :Nd fiber crystals by micro-pull-
ing-down technique
V.I. Chani, A. Yoshikawa, Y. Kuwano, K. Hasegawa
and T. Fukuda 155


Densities and surface tensions of lithium niobate melts
X. Chen, Q. Wang, X. Wu and K. Lu 163


Solution growth; industrial, biological and molecular crystalli-
zation
Thermodynamic modelling of changes induced by salt
pressure crystallisation in porous media of stone
D. Benavente, M.A. Garcia del Cura, R. Fort and
S. Ordonez 168

Solution growth of a novel nonlinear optical material:
L-histidine tetrafluoroborate
M.D. Aggarwal.J. Choi, W.S. Wang, K. Bhat R.B. LaL
A.D. Shields, B.G. Penn and D.O. Frazier 179


Effect of inorganic phosphate ions on the spontaneous
precipitation of vaterite and on the transformation of
vaterite to calcite
A. Katsifaras and N. Spanos 183


The initial stage of crystallization oflysozyme: a differen-
tial scanning calorimetric (DSC) study
K. Igarashi, M. Azurna, J. Kato and H. Ooshima 191


General subjects

Experimental determination of physical parameters and
analysis of the Bridgman-Stockbarger solidification for
the growth AgGaSez crystal in ampoule with conical
shape
O. Brisson, M. El Ganaoui, A. Simonnet and J.C.
Launay 201


Analysis of the unsteady segregation in crystal growth
from a melt. 1. Fluctuating interface velocity
F.Z. Haddad, J.P. Garandet, D. Henry and
H. Ben Hadid 213


A multiphase-field model: sharp interface asymptotics
and numerical simulations of moving phase boundaries
and multijunctions
Ben Nestler 224


Priority communications

Crystal growth of PbTe doped with Pbl(2) by the physical
transport method
S. Yoneda, E. Ohta, H.T. Kaibe, I.J. Ohsugi, K.
Miyamoto and I.A. Nishida 229


Some novel results of scanning tunneling microscopy
(STM) study of cadmium iodide crystals
R. Singh, S.B. Samanta, A.V. Narlikar and G.C.
Trigunayat 233


In situ observations of interaction between particulate
agglomerates and an advancing planar solid/liquid inter-
face: microgravity experiments
S. Sen, F. Juretzko, D.M. Stefanescu, B.K. Dhindaw
and P.A. Curreri 238


Effect of liquid shape on flow velocity induced by
Marangoni convection in a floating half-zone
system
Y. Okano, N. Audet, S. Dost and S.-i. Kunikata 243

JOURNAL OF CRYSTAL GROWTH

Vol . 204, No. 3 , july 1999

Classical semiconductors

Pyrolysis of rnonomethylhydrazine for organornetallic
vapor-phase epitaxy (OMVPE) growth
R.T. Lee and G.B. Stringfellow 247

Metal organic vapour-phase epitaxy (MOVPE) growth
of InP and InGaAs using tertiarybutylarsine (TBA) and
tertiaryblltylphosphine (TBP) in Nz ambient
D. Keiper, R. Westphalen and G. Landgren 256

MBE growth and characterisation of AI,Gai-,Sb layers
on GaSb substrates

Y. Rouillard, B. Jenichen, L. Daweritz, K. Ploog,
C. Gerardi, C. Giannini, L. De Caro and L. Tapfer 263

Single-crystal GaN pyramids grown on (I I l)Si substra-
tes by selective lateral overgrowth
W. Yang, S.A. MePherson, Z. Mao, S. McKernan and
C.B. Carter 270

Characterization of silicon-doped inP grown by solid-
source molecular beam epitaxy using a valved phos-
phorus cracker cell

K. Radhakrishnan, H.Q. Zheng, P.H. Zhang, S.F.
Yoon and G.I. Ng 275

Isobaric equation of state for liquid Hgi _xCdxTe
A. Oztekin and A.J. Pearlstein 282

Electronic materials

A new growth model of Bi-based 2212 superconducting
whiskers

Y.Q. Zhou, Z.J. Chen, H. Jin, P. Zheng and W.H.
Wang 289

Structural characteristics of ^-axis-oriented PrBa2Cu307
thin films grown by pulsed laser deposition
R.-p. Wang, Y.-l. Zhou, S.-h. Pan, H.-h. Wang, G.-z.
Yang, G.-w. Zhou and Z. Zhang 293

The use of 1,2,3,4,5 pentamethylcyclopentadieneas an in
situ growth modifier chemical for the chemical vapour
deposition of iron from iron pentacarbonyl
P.A. Lane and PJ. Wright 298

Growth ofCagLa2(P0^02 single crystals as substrates
for GaN epitaxial growth

A. Yoshikawa, V.V. Kochurikhin, N. Futagawa,
K. Shimamura and T. Fukuda 302

Film growth of an organic photoconductor: titanyl-
phthalocyanine on an indium-tin-oxide substrate
T. Hanada, H. Takiguchi, Y. Okada, Y. Yoshida,
N. Tanigaki and K. Yase 307

Growth and characterization of pure and doped single
crystals of CuGeOa
S. Elizabeth, P.K. Babu and H.L. Bhat 311

Crack generation and avoidance during the growth of
sapphire domes from an element of shape
F. Theodore, T. Duflar, J.L. Santailler, J. Pesenti,
M. Keller, P. Dusserre, F. Louchet and V. Kurlov 317

Solution growth; industrial, biological and molecular crystalli-
zation

Rapid growth of hybrid organic-inorganic crystals for
nonlinear optics
J. Zaccaro, J. Hartwig, J. Baruchel and A. lbanez 325

Growth and characterisation of L-arginine phosphate
family crystals

A.S. Haja Hameed, G. Ravi, MD.M. Hossain and
P. Ramasamy 333

Etch pit study of different crystallographic faces of L-
arginine hydrobromide monohydrate (LAHBr) in some
organic acids
S. Mukerji and T. Kar 341

Microscopic observations of formation processes of
clathrate-hydrate films at an interface between water and
carbon dioxide
T. Uchida, T. Ebinuma, J. Kawabata and H. Narita 348

Characterization of protein and virus crystals by quasi-
planar wave X-ray topography: a comparison between
crystals grown in solution and in agarose gel
B. Lorber, C. Sauter, J.D. Ng, D.W. Zhu, R. Giege,
0. Vidal, M.C. Robert and B. Capelle 357


Calcium carbonate overgrowth on elastin substrate
F. Maiioli and E. Dalas 369

Melt growth and inhibition of ethylene oxide dathrate
hydrate
R. Larsen, C.A. Knight, K.T. Rider and E.D. Sloan Jr. 376

General subjects

EITects of rotation on a nonaxisyniinetric chimney con-
vection during alloy solidification
D.N. Riahi 382

Direct numerical simulation of oscillatory Marangoni
convection in cylindrical liquid bridges
Z. Zeng, H. Mizuseki, K. Higashino and Y. Kawazoe 395

Priority communications

The growth and properties of magnesium-doped potassi
um lithium niobate crystal
Z. Cheng, S. Zhang, G. Zhou, J. Han and H. Chen 405

Attenuation of natural convection by magnetic force in
electro-nonconducting fluids
J. Qi, N.I. Wakayama and A. Yabe 408

Direct observation of fragments of primary dendrite from
undercooled Fe-Co alloys
M. Li, G. Yang and Y. Zhou 413

_______________________________________

JOURNAL OF CRYSTAL GROWTH

VOL. 204, NO. 4, AUGUST 1999


Classical semiconductors

Morphological and structural characteristics of ho-
moepitaxial GaN grown by metalorganic chemical va-
pour deposition (MOCVD)
J.L. Weyher, P.D. Brown, A.R.A. Zauner, S. Mullei,
C.B. Boothroyd, D.T. Foord, P.R. Hageman,
C.J. Humphreys, P.K. Larsen, I. Grzegory and S.
Porowski 419


Metalorganic vapor-phase epitaxy (MOVPE) growth of
InGaAsP multiple-quantum-well distributed feedback
lasers on InP corrugated substrate
Y. Kashima, T. Nozawa and T. Munakata 429


Post growth n-type doping of ZnSe-bulk single crystals
B. Reinhold and M. Wienecke 434


Investigations on self-diffusion and diffusion of dopants
in II-VI semiconductor compounds depending on its
non-stoichiometry
M. Wienecke, B. Reinhold and S. Hermann 441


Misfit dislocations and stresses in Cd(x)Hg(1-x)Te/CdTe
heteroj unctions
L.V. Kurilo, I.0. Rudyi and O.I. Vlasenko 447


Surface morphology of silicon layers grown on patterned
silicon substrates by liquid-phase epitaxy
K.J. Weber and K.R. Catchpole 453


Grown-in microdefects, residual vacancies and oxygen
precipitation bands in Czochralski silicon
V.V. Voronkov and R. Falster 462


Numerical and experimental investigations of convection
and heat/mass transfer effect in melts on inhomogeneity
formation during Ge crystal growth by the Bridgman
method
P.K. Volkov, B.G. Zakharov and Yu.A. Serebryakov 475

electronic materials

Epitaxial growth of lithium fluoride on the (1 1 1) surface
of CaF(2)
St. Kilimpp and H. Dahringhaus 487


Sapphire Fibres grown by a modified internal crystallisa-
tion method
V.N. Klirlov, V.M. Kiiko, A.A. Kolchin and S.T.
Mileiko 499


Crystal growth of PbWO(4) by the vertical Bridgman
method: effect of crucible thickness and melt composition
K. Tanji, M. Ishii, Y. Usuki, M. Kohayashi, K. Hara,
H. Takano and N. Senguttuvan 505


Solution growth; industrial, biological and molecular crystalli-
zation
The effect of impurities and supersaturation on the rapid
growth of KDP crystals
N. Zaitseva, L. Carman, I. Smolsky, R. Torres and M.
Yan 512


THF-water hydrate crystallization: an experimental in-
vestigation
S. Devarakonda, A. Groysman and A.S. Myerson 525


Synthesis of large zeolite X crystals
J. Warzywoda, N. Bac and A. Sacco Jr. 539

The influence of a homologous protein impurity on ly-
sozyme crystal growth
V. Bhamidi, B.L. Hanson, A. Edmundson, E. Skrzyp-
czak-Janklin and C. Schall 542


Theory of protein crystal nucleation and growth control-
led by solvent evaporation
J.K. Baird 553


Author index 563

Subject index 569

Instructions to Authors 571

_______________________________________

JOURNAL OF CRYSTTAL GROWTH
VOL. 197, NO. 3, FEBRUARY 1999



Contents

Preface vii
SECTION I. CdTe/CdZnTe GROWTH

Pre-transition phenomena in CdTe near the melting point
L. Shcherbak 397

Vapor pressure scanning implications of CdTe crystal growth
J.H. Greenberg 406

Recent developments in II-VI substrates
K. Sato, Y. Seki, Y. Matsuda and 0. Oda 413

Parameters of substrates-single crystals of ZnTe and Cd 1 _x Zn,Te (x < 0.25), obtained by physical vapor transport technique
(PVT)

A. Mycielski, A. Szadkowski, E. Lusakowska, L. Kowaiczyk, J. Domagala, J. Bak-Misiuk and Z. Wilamowski 423

Zn concentration determination in CdZnTe by NIR spectroscopy
C.D. Maxey, J.E. Gower, P. Capper, E.S. O'Keefe, T. Skauli and C.K. Ard 427

Heat transfer simulation in a vertical Bridgman CdTe growth configuration
C. Martinez-Tomas, V. Munoz and R. Triboulet 435

Numeric simulation of vertical Bridgman growth of Cdi-,Zn,Te melts
V.M. Lakeenkov, V.B. Ufimtsev, N.I. Shmatov and Yu.F. Schelkin 443

SECTION II. WIDE GAPS GROWTH

Vapour growth and doping of ZnSe single crystals
Yu.V. Korostelin, V.I. Koziovsky, A.S. Nasibov and P.V. Shapkin 449

In situ observation of twin formation during the growth of ZnSe single crystals from the vapor phase
E. Schönherr and M. Freiberg 455

Low resistive ZnSe substrates
P. Lemasson, A. Riviere, G. Didier, A. Tromson-CarIi and R. Triboulet 462

Dependence of lattice parameter of melt-grown ZnSe on Zn partial pressure during in situ annealing
H. Udono, l. Kikuma and Y. Okada 466

Distribution of tellurium in melt-grown ZnSe(Te) crystals
L.V. Atroshchenko, L.P. Gal'chinetskii, S.N. Galkin, V.D. Ryzhikov, V.I. Silin and N.I. Shevtsov 471

Structure defects and phase transition in tellurium-doped ZnSe crystals
L.V. Atroshchenko, L.P. Gal'chmetskii, S.N. Galkin. V.D. Ryzhikov and V.I. Silin 475

Optical transmission of ZnSe crystals grown by solid phase recrystallization
E. Rzepka, J.P. Roger, P. Lemasson and R. Triboulet 480

High temperature electrical conductivity in the phase transition region
K. Lott and T. Nirk 485

High temperature electrical conductivity in the Cu solubility limit range in ZnS : Cu
K. Lott, M. Raukas, A. Vishnjakov and A. Grebennik 489

A method for the calculation of defect equilibrium
K. Lott and L. Turn 493

Study of the chemically activated sublimation of ZnSe
I. Mora-Sero, V. Munoz, M. Barbe and R. Triboulet 497

Crystal growth of SrS from Te solution and its optical properties
H. Kanie, H. Kagawa and T. Kato 504

Structural properties of MOVPE-grown ZnSe studied by X-ray diffractometry, atomic force microscopy and electron
microscopy


Q. Liu, H. Lakner, W. Taudt, M. Heuken, C. Mendorf, K. Heime and E. Kubaiek 507
Isotopically pure ZnSe crystals grown from the vapor

R. Lauck and E. Schönherr 513
Preparation of (0 01) ZnSe surfaces for homoepitaxy

S. Storm, W. Neumann and H. Niehus 517
Scanning force microscopy and electron microscopy studies of pulsed laser deposited ZnO thin films: application to the bulk

acoustic waves (BAW) devices
P. Verardi, N. Nastase, C. Gherasim, C. Ghica, M. Dinescu, R. Dinu and C. Flueraru 523


SECTION III. NARROW GAPS GROWTH

Laser emission in HgCdTe in the 2-3.5 ^m range
J. Bleuse, J. Bonnet-Gamard, G. Mula. N. Magnea and J.-L. Pautrat 529

Can percolation control doping, diffusion and phase segregation occur in (Hg.Cd)Te?
D. Cahen, 0. Melamed and 1. Lubomirski 537

Influence of structural defects on lattice parameter and measured composition ofHgi-,Cd,Te epilayers
N. Mainzer, E. Zolotoyabko, A. Berner, E, Lakin, G. Bahir and A. Sher 542

Generation-recombination noise and photo-induced transient conductivity in epitaxial CdHgTe long wavelength infrared
detectors
N. Paul, C.M. Van Vliet and S. Mergui 547

Seedless THM growth of Cd,Hg 1_ x Te (x = 0.2) single crystals within rotating magnetic field
A.S. Senchenkov, I.V. Barmin, A.S. Tomson and V.V. Krapukhin 552

SECTION IV. DOPING, DEFECTS & DIFFUSION

Doping and contacting of wide gap II-VI compounds
W. Faschinger 557

Electron-irradiation enhanced dislocation glide in II-VI semiconductors
C. Levade and G. Vanderschaeve 565

Stoichiometry and impurity concentrations in II-VI compounds measured by elastic recoil detection analysis (ERDA)
M. Birkholz, W. Bohne, J. Röhrich, A. Jager-Waldau and M.C. Lux-Steiner 571

Investigation of indium-defect pairs in CdTe by PAC spectroscopy
U. Reislöhner, N. Achtziger and W. Witthuhn 576

Point defect characterization of Zn- and Cd-based semiconductors using positron lifetime spectroscopy
G. Tessaro and P. Mascher 581

Investigations on the effect of contacts on p-type CdTe DLTS-measurements
K. Scholz, H. Stiens and G. Müller-Vogt 586

Diffusion length of minority carriers in (CdZn)Te and (HgCd)Te single crystals measured by EBIC method
J. Franc, E. Belas, A.L. Toth, H. Sitter, P. Hlidek. P. Moravec and P. Hoschi 593

Conductivity change of Au/p-CdTe/Au as a function of the temperature gradient
S. Vackova. K. Zdansky, K. Vacek, L. Scherback, P. Feichouk and M. llaschouk 599

High-temperature point defect equilibrium in CdTe modelling
P. Fochuk, 0. Korovyanko and 0. Panchuk 603

IV group dopant compensation effect in CdTe
0. Panchuk, A. Savitskiy, P. Fochuk, Ye. Nykonyuk, 0. Parfenyuk, L. Shcherbak, M. llashchuk, L. Yatsunyk
and P. Feychuk 607

Experimental evidence of the self-compensation mechanism in CdS
U.V. Desnica, I.D. Desnica-Frankovic, R. Magerle, A. Burchard and M. Deicher 612

SECTION V. SUBSTRATE/LAYER RELATIONSHIP

Substrate/layer relationships in ll-VIs
S.J.C. Irvine, A. Stafford and M.U. Ahmed 616

Characterization of CdTe substrates and MOCVD Cdi_,Zn,Te epilayers
M. Levy, N. Amir, E. Khanin, Y. Nemirovsky and R. Beserman 626

Improvement of CdTe substrate quality by acoustic treatment
M. Lisiansky, V. Korchnoi, A. Berner. E. Muranevich and R. Weil 630

SECTION VI. NUCLEAR DETECTION

State of the art of (Cd,Zn)Te as gamma detector
M. Fiederle, T. Feitgen, J. Meinhardt, M. Rogalla and K.W. Benz 635

Zinc segregation in HPB grown nuclear detector grade Cd 1-x Zn,Te
P. Fougeres, L. Chibani, M. Hageali, J.M. Koebel, G. Hennard, A. Zumbiehl, P. Siffert and M. Benkaddour 641

Influence of deep levels on CdZnTe nuclear detectors
A, Zerrai, K. Cherkaoui, G. Marrakchi, G. Bremond, P. Fougeres, M. Hage-Ali, J.M. Koebel and P. Siffert 646


Electric field distribution in Cd 1-x Te and Cdi_,Zn_(Te nuclear detectors
A. Zumbiehl, M. Hage-Ali, P. Fougeres, J.M. Koebel. R. Regal and P. Siffert 650

The use of semiconductor scintillation crystals A(11)B(VI) in radiation instruments
V. Ryzhikov, V. Chernikov, L. Gal'chinetskii, S. Galkin, E. Lisetskaya, A. Opolonin and V. Volkov 655

Growth and characterization of high-resistivity CdTe(CI)
D.V. Korbutyak, S.G. Krylyuk, P.M. Tkachuk, V.I. Tkachuk, N.D. Korbutjak and M.D. Raransky 659

CdZnTe radiation detectors
A.A. Melnikov 663

Growth of CdZnTe single crystals for radiation detectors
A.A. Melnikov, A.S. Sigov, K.A. Vorotilov, A.A. Davydov, L.I. Topalova and N.V. Zhavoronkov 666

Resistivity simulation of C2T materials
A. Zumbiehl, P. Fougeres, M. Hage-Ali, J.M. Koebel, P. Siffert, A. Zerrai, K. Cherkaoui, G. Marrakchi and G. Bremond 670

Photo and X-ray sensitive heterostructures based on cadmium telluride
R. Ciach, M.V, Demich, P.M. Gorley, Z. Kuznicki, V.P. Makhniy, I.V. Malimon and Z. Swiatek 675


SECTION VII. SEMIMAGNETICS

Negatively charged exciton formation in an asymmetric double CdTe/(Cd,Mn)Te QWs
J. Siviniant, N. Paganotto, A.V. Kavokin, D. Coquillat, D. Scalbert, J.-P. Lascaray and J. Cibert 680

Defect studies in Cdo.gsMnoosTe : Ga by DLTS
J. Szatkowski, E. Placzek-Popko, K. Sieranski and B. Bieg 684

Low-pressure synthesis and Bridgmao growth of Hgi-,Mn,Te
C. Reig, N.V. Sochinskii and V. Munoz 688

Magneto-optical studies of quaternary diluted magnetic semiconductors
L. Bryja, M. Ciorga, J. Misiewicz, A. Zaieski. P. Becia and W.C. Chou 694

Enhancement of magneto-optical effects in ZnHgMnTe solid solutions
A.I. Savchuk, V.I. Fediv, V.M. Frasunyak, I.D. Stolyarchuk and P.I. Nikitin 698

Investigation of properties of porous silicon embedded with ZnSe and CdSe
A.I. Belogorokhov, L.I. Belogorokhova and S. Gavrilov 702


SECTION VIII. SOLAR CELLS & PHOTOREFRACTIVITY


State of the art and prospects of photorefractive CdTe
Y. Marfaing 707

Intrinsic defects in photorefractive bulk CdTe and ZnCdTe
H.J. von Bardeleben, T. Arnoux and J.C. Launay 718

Spectroscopic characterization of photorefractive CdTe: Ge
B. Briat, F. Ramaz, B. Farid, K. Shcherbin and H.J. von Bardeleben

Investigation of deep levels in vanadium-doped CdTe and CdZnTe
A. Zerrai, M. Dammak, G. Man-akchi, G. Bremond, R. Triboulet and Y. Marfaing 729

Materials aspects of CdTe/CdS solar cells
K. Durose, P.R. Edwards and D.P. Halliday 733

Sulphur diffusion in CdTe and the phase diagram of the CdS-CdTe pseudo-binary alloy
D.W. Lane, G.J. Conibeer, D.A. Wood, K.D. Rogers, P. Capper, S. Romani and S. Hearne 743



638
Growth of lysozyme crystals under microgravity conditions in the LMS (STS-78) mission
F. Otalora, M.L. Novella, D. Rondon and J.-M. Garcia-Ruiz 649

SECTION IX. SCREENING METHODS

Practical experimental design techniques for automatic and manual protein crystallization
P.D.S. Stewart and P.F.M. Baldock 665

Simplex optimization of protein crystallization conditions
B.D. Prater, S.C. Tuller and L.J. Wilson 674

SECTION X. NEW TECHNIQUES

Manipulating crystals with light
P.A. Bancel, V.B. Cajipe and F. Rodier 685

Spatiotemporal protein crystal growth studies using microfluidic silicon devices
A. Sanjoh and T. Tsukihara 691

Supersaturation patterns in counter-diffusion crystallisation methods followed by Mach-Zehnder interferometry
J.M. Garcia-Ruiz, M.L. Novella and F. Otalora 703

JOURNAL OF CRYSTAL GROWTH

VOL:197, NO:1-2, FEBRUARY 1999

Classical semiconductors
Strong band gap narrowing in quasi-binary
(GaSb)1-x _(lnAs)x crystals grown from melt
P.S. Dutta and A.G. Ostrogorsky 1

Incorporation of Mg in GaN grown by molecular beam
epitaxy
J.W. Orton, C.T. Foxon, T.S. Cheng, S.E. Hooper,
S.V. Novikov, B. Ya.Ber and Yu.A. Kudriavtsev 7

The initiation of GaN growth by molecular beam epitaxy
on GaN composite substrates
T.S. Cheng, S.V. Novikov, V.B. Lebedev, R.P.
Campion, N.J. Jeffs, Yu.V. Melnik, D.V. Tsvetkov,
S.I. Stepanov, A.E. Cherenkov, V.A. Dmitriev,
D. Korakakis, O.H. Hughes and C.T. Foxon 12

Continuous and discontinuous metal-organic vapour
phase epitaxy of coherent self-assembled islands: effects
on size homogeneity

W. Seifert, J. Johansson, N. Carlsson, A. Gustafsson
and J.-O. Malm 19

Comparison of carbon doping of InGaAs and GaAs by
CBr4 using hydrogen or nitrogen as carrier gas in
LP-MOVPE
D. Keiper, R. Westphalen and G. Landgren 25

Surface irregularities of MBE grown cubic GaN layers
A.P. Lima, T. Frey, U. Kohler, C. Wang, DJ. As,
B. Schottker, K. Lischka and D. Schikora 31

An atomic force microscopy study of a temperature
dependent morphology transition of GaN grown on
sapphire by MOCVD

F.K. de Theije, A.R.A. Zauner, P.R. Hageman, WJ.P.
van Enckevort and P.K. Larsen 37

Fabrication of nanoscale structures of InGaN by
MOCVD lateral overgrowth

J. Wang, M. Nozaki, Y. Ishikawa, M.S. Hao, Y.
Morishima, T. Wang, Y. Naoi and S. Sakai 48

Effect of hydrogen in AIGaAs grown by atomic
hydrogen-assisted molecular beam epitaxy
K.-Y. Jang, Y. Okada and M. Kawabe 54

Characterization of solid source MBE-grown
In0.48Ga0.52P/Ino.2Gao.8As/GaAs structures using
X-ray reflectivity technique
S.F. Yoon, P.Y. Lui and H.Q. Zheng 59

Chemical beam epitaxy of GainNAs/GaAs quantum
wells and its optical absorption property
T. Miyamoto, K. Takeuchi, T. Kageyama, F.
Koyama and K. Iga 67
Stimulated emission from optically pumped cubic
GaN/AIGaN double heterostructures
J. Wu, H. Yaguchi, K. Onabeand Y. Shiraki 73

Doping behavior of lno.iGao.9N codoped with Si and Zn
C.-R. Lee, J.-Y. Leem, S.K. Noh, S.-J. Son and
K.-Y. Leem 78

RHEED oscillation studies of pseudomorphic inGaAs
strained layers on GaAs substrate
J.-Y. Leem, C.-R. Lee, S.K. Noh and J.-S. Son 84

Effects of arsenic beam equivalent pressure on InGaAsP
grown by solid source molecular beam epitaxy with
continuous white phosphorous production
W. Shi, D.H. Zhang, H.Q. Zheng, S.F. Yoon, C.H.
Kam and A. Raman 89

InAs/Ino.52Alo.48As quantum wire structure with the
specific layer-ordering orientation on lnP(0 0 1)
J. Wu, B. Xu, H.X. Li, Q.W. Mo, Z.G. Wang, X.M.
Zhao and D. Wu 95

Thermodynamic study on the role of hydrogen during
the MOVPE growth of group III nitrides
A. Koukitu, T. Taki, N. Takahashi and H. Seki 99

Post-growth, In doping ofCdTe single crystals via vapor
phase

V. Lyahovitskaya, L. Kaplan, J. Goswami and
D. Cahen 106

A quantitative study of compositional profiles of chem-
ical vapour-deposited strained silicon-germanium/
silicon layers by transmission electron microscopy
T. Walther and C.J. Humphreys 113

Growth morphology and micro-structural aspects of Si
nanowires synthesized by laser ablation
G. Zhou, Ze Zhang and D. Yu 129

One-dimensional growth mechanism of crystalline sili-
con nanowires
Y.F. Zhang, Y.H. Tang, N. Wang, C.S. Lee, 1. Bello
and S.T. Lee 136

Electronic materials
A new single crystal growth method of
(Bi.Pb)2Sr2CaCu2O.. superconductor
M. Mansori, H. Faqir, P. Satre, A. Bendriss, Y. Syono
and A. Sebaoun 141

Liquid phase epitaxial growth of SiC
M. Syvajarvi, R..Yakimova, H.H. Radamson, N.T.
Son, Q. Wahab, I.G. lvanov and E. Janzen 147
Growth of 6H and 4H-SIC by sublimation epitaxy
M. Syvajarvi, R. Yakimova. M. Tuominen, A.
Kakanakova-Georgieva, M.F. MacMillan, A. Henry,
Q. Wahab and E. Janzen 155

Crystal growth of WSi2 on a W(l 1 0) surface
H. Kawanowa and Y. Gotoh 163

Chemical reaction process and the single crystal growth
of CulnS2 compound
H. Matsushita, T. Mihira and T. Takizawa 169

Growth of single CulnSe2 crystals by the traveling heater
method and their characterization
V. Lyahovitskaya, S. Richter, F. Frolow, L. Kaplan,
Y. Manassen, K. Gartsman and D. Cahen 177

Growth modes in vapour-phase prepared orthorhombic
molybdenum trioxide crystals
S. Balakumar and H.C. Zeng 186

Phase stability, solubility and hydrothermal crystal
growth of PbTiC)3
M.C. Gelabert, R.A. Laudise and R.E. Riman 195

Effect of starting melt composition on crystal growth of
La.3Ga;SiOin
H. Takeda, K. Shimamura, V.I. Chani and T. Fukuda 204

Investigations on the growth of Bi2TeO5 and TeO2; crystals
S. Kumaragurubaran, D. Krishnamurthy, C.
Subramanian and P. Ramasamy 210

Growth of zinc thiourea sulfate (ZTS) single crystals:
a potential semiorganic NLO material
P.M. Ushasree, R. Jayavel, C. Subramanian and P.
Ramasamy 216

Laser heated pedestal growth and characterization of
zinc lithium niobate crystals
M. Ferriol, Y. Terada, T. Fukuda and G. Boulon 221

Crystal growth of YCa4O(B03)3 and its orientation
Q. Ye and B.H.T. Chai 228

Theoretical study of the initial gas-phase reactions of
TaN CVD
Y. Okamoto 236

Solution growth; industrial, biological and molecular crystalli-
zation
The impact oftwinning on the morphology of gama-Al(OH)3
crystals
C. Sweegers, W.J.P van Enckevort, H. Meekes, P.
Bennema, I.D.K. Hiralal and A. Rijkeboer 244

Crystallization of high molecular weight urokinase
M.Y. Gamarnik 254

Electron microscopic studies on the initial process of
lysozyme crystal growth
M. Michinomae, M. Mochizuki and M. Ataka 257

Impurity effects on crystallization rates of n-hexadecane
in oil-in-water emulsions

N. Kaneko, T. Horie, S. Ueno, J. Yano, T. Katsuragi
and K. Sato 263

Theoretical analysis of changes in habit of growing crys-
tals in response to variable growth rates of individual faces
J. Prywer 271

Solidification microstructure selection in the Al-rich
AI-La, AI-Ce and AI-Nd systems
A. Hawksworth, W.M. Rainforth and H. Jones 286

Transition from regular to irregular thermal wave by
coupling of natural convection with rotating flow in
Czochralski crystal growth
Y.-S. Lee and Ch.-H. Chun 297

Effects of a cusp magnetic field on the oscillatory convec-
tion coupled with crucible rotation in Czochralski crystal
growth
Y.-S. Lee and Ch.-H. Chun 307

Collective effects during crystal growth in the presence of
mobile nonreactive impurities: experiments and simula-
tions
N. Vandewalle, M. Ausloos and R. Cloots 317

A semi-analytical model of microsegregation in a binary
alloy
V.R. Voller 325

A semi-analytical model of microsegregation and coarse-
ning in a binary alloy
V.R. Voller 333

Buoyant melt flows under the influence of steady and
rotating magnetic fields
R. MoBner and G. Gerbeth 341

Equiaxed dendritic solidification in supercooled melts
V. Pines, A. Chait, M. Zlatkowski and C. Becker-
mann 355

Letters to the Editors

RHEED characterization of InAs/GaAs grown by MBE
L.C. Cai. H. Chen, C.L. Bao, Q. Huan and J.M' Zhou 364

p-Type co-doping study of GaN by photoluminescence
J.-P. Zhang, D.-Z. Sun, X.-L. Wang, M.-Y. Kong,
Y.-P. Zeng, J.-M. Li and L.-Y. Lin 368

Uniformity enhancement of the self-organized InAs
quantum dots
H. Zhu, Z. Wang, H. Wang, L. Cui and S. Feng 372

Dependence of the surface resistance on the microdefects
in YB2Cu3O7-x films
Y. Ueno, N, Sakakibara and H. Hoshizaki 376

In situ measurement of the growth rate of YBa2Cu30,
single crystals

D.K. Aswal, M. Shinmura, Y. Hayakawa and M.
Kumagawa 379

Rapid growth of KH2PO4 crystals in aqueous solution
with additives
Y. Shangfeng, S. Gen bo, L. Zhengdong and J. Rihong 383

Pseudo-solubilities of potassium sulfate in water in the
presence of crystal-growth and -dissolution suppressor
iron(lll) impurities
N. Kubota, Y. FuJisawa, M. Yokota and J.W. Mullin 388

Primary cellular/dendritic spacing selection of AI-Zn
alloy during unidirectional solidification
J. Feng, W.D. Huang, X. Lin, Q.Y. Pan, T. Li and
Y.H. Zhou 393

JOURNAL OF CRYSTAL GROWTH

Volume 197 , No. 4 , 1999

Classical semiconductors

Segregation of tellurium in GaSb single crystals and
associated diffusion coefficient in the solute layer
P.S. Dutta and A.G. Ostrogorsky 749

Surface morphology of InGaAs and InP materials
grown with trimethylarsenic and arsine on vicinal inP
substrates
H. Dumont, L. Auvray, J. Dazord, V. Soliliere, Y.
Monteil, J. Bouix and A. Ougazzaden 755

Characterization of beryllium doped Alo.33Gao.67As
layers grown by molecular beam epitaxy
H.Q. Zheng, K. Radhakrishnan, H. Wang, P.H.
Zhang, S.F. Yoon and G.I. Ng 762

InGaAs single crystal using a GaAs seed grown with the
vertical gradient freeze technique
Y. Nishijima, K. Nakajima, K. Otsubo and H.
Ishikawa 769

Influence of different V-grooved GaAs substrates on the
geometrical shape of InGaAs/GaAs quantum wires
A. Passaseo, M. Longo, R. Rinaldi, R. Cingolani,
M. Catalane, A. Taurino and L. Vasanelli 777

Structural study of metastable (GaAs)1-x(Ge2)x thin
films grown by RF magnetron sputtering
B. Salazar-Hernandez, M.A. Vidai, M.E. Constan-
tino, H. Navarro-Contreras, R. Asomoza and
A. Merkulov 783

Size quantization effects in InAs self-assembled islands
on lnP(0 0 1) at the onset of 2D-to-3D transition
F.-Q. Liu, Z.-G. Wang, J. Wu, B. Xu, W. Zhou and
J.-J. Qian 789

Effect of plastic deformation on photoluminescence of
ZnTe bulk monocrystals
J.A. Garcia, A. Remon, V. Munoz and R. Triboulet 794

Structural property and interband transition studies on
CdxZn1-,Te/ZnTe coupled step and rectangular quan-
tum wells

T.W. Kirn, J.H. Kirn, H.L. Park and J.Y. Lee 799

^

MOVPE growth of ZnS on (1 0 0)GaAs using dimethyl-
zinc and ditertiarybutyl sulphide precursors
C. Thiandoume, 0. Ka, A. Lusson and 0. Gorochov 805

Thermal and solutal Marangoni convection in In-Ga-Sb
system
K. Arafune and A. Hirata 811

Electronic materials

Optimum crucible material for growth ofPr2 -xCexCu04
crystal
N. Kaneko, Y. Hidaka, S. Hosoya, K. Yamada, Y.
Endoh, S. Takekawa and K. Kitamura 818


Crystal growth of the spin-ladder compound
(Câ,La.)l4.Cu24041 and observation of one-dimensional
disorder
U. Ammerahl and A. Revcolevschi 825

Effect of intercalating indium in WSe2 single crystals
M.P. Deshpande, P.D. Patel, M.N. Vashi and M.K.
Agarwal 833

The surface modification of Si(l 1 1) substrates with SiN,
for the growth of high quality (beta)-SiC epilayers
K.C. Kirn, K.S. Nahm, E.-K. Suh and Y.G. Hwang 841

Structure and surface morphology of epitaxial Ni films
grown on Mg0(l 1 1) substrates: growth of high quality
single domain films
P. Sandstrom, E.B. Svedberg, J. Birch and J.-E.
Sundgren 849

Growth and characterization of antimony doped tin
oxide thin films
S. Shanthi, C. Subramanian and P. Ramasamy 858

Growth and characterization of large-size bismuth
germanate single crystals by low thermal gradient Czoch-
ralski method
R.V.A. Murthy, M. Ravikumar, A. Choubey, K. Lal,
L. Kharachenko, V. Shieguel and V. Guerasirnov 865
Structural and electrical characteristics of oriented
Pb(Zio.53Tio.48)03 ferroelectric thin films deposited on
diamond substrates by a simple sol-gel process
J. Zeng, L. Wang, J. Gao, Z. Song, X. Zhu and C. Lin 874

Crystal growth of aluminum tungstate AI29(WO4)3 by the
Czochralski method from nonstoichiometric melt
A. Dabkowski, H.A. Dçbkowska, J.E. Greedan, G.
Adachi, Y. Kobayashi, S. Tamura, M. Hiaraiwa and
N. Imanaka 879

Nucleation, morphology and spectroscopic properties
of Yb3+-doped KY(W04)2: crystals grown by the top
nucleated floating crystal method
G. Métrât, M. Boudeulle, N. Muhlstein, A. Brenier
and G. Boulon 883

Stoichiometric LiTaO3 single crystal growth by double
crucible Czochralski method using automatic powder
supply system
Y. Furukawa, K. Kitamura. E. Suzuki and K. Niwa 889

Growth and characterization of Ce-doped LiCaAlFg
single crystals
K, Shimamura, N. MuJ'iJatu, K. Nakano, S.L.
Baldochi, Z. Liu, H. Ohtake, N. Sarukura and T.
Fukuda 896

Czochralski growth of rare-earth orthosilicates-Y2SiO5
single crystals

Zhang Shoudu, Wang Siting, Shen Xingda. Wang
Haobing, Zhong Heyu, Zhang Shunxing and Xu Jun 901

Self-organized growth of complex oxide Ce : BaTiO3
nano-islands on (1 0 0)MgO by pulsed laser ablation
W. Shi, Z. Chen, N. Liu, Y. Zhou and S. Pan 905

Solution growth; industrial, biological and molecular crystalli-
zation
Design and benefits of continuous filtration in rapid
growth of large KDP and DKDP crystals
N. Zaitseva, J. Atherton, R. Rozsa, L. Carman, L
Smolsky, M. Runkel, R. Ryon and L. James 911

Effect of baffle geometries on crystal size distribution of
aluminum potassium sulfate in a seeded batch crystal-
lizer
K. Shimizu, K. Takahashi, E. Suzuki and T. Nomura 921

Heterogeneous nucleation of calcium phosphate salts at
a solid/liquid interface examined by scanning angle re-
flectometry
P.A. Ngankam, P. Schaaf, J.C. Voegel and F.J.G.
Cuisinier 927

Abnormal refinement of grains in calcium phosphate
films during a low temperature crystallization
Z.S. Luo, F.Z. Cui and W.Z. Li 939

Transient analysis of surface supersaturation after crystal
face submersion using the analytical and transmission-
line matrix (TLM) methods
M. Rak, X. Gui and D. de Cogan 944

General subjects

Temperature induced change of surface roughness of
Au(l 1 1) epitaxial films on mica
P. Sobotik and 1. Ost'adal 955

Solid-liquid interface in the growth of a decagonal Al-
72 Co-16 Ni-12 quasicrystal
J.Q. Guo, TJ. Sato, T. Hirano and A. P. Tsai 963

Evaluation of the onset of oscillatory thermocapillary
convection in liquid bridge with empirical corrélations in
terms of a modified Marangoni number
M. Yamamoto and K, Torii 967

Instability in competitive crystallization in porous vis-
coelastic materials
J. Moller and K.I. Jacob 973

Effects of ampoule rotation on flows and dopant segrega-
tion in vertical Bridgman crystal growth
C.W. Lan 983

Model for free dendritic alloy growth under interfacial
and bulk phase nonequilibrium conditions
P.K. Galenko and D.A. Danilov 992

Letters to the Editors

Structure study of Hgi-,Cd,Te-HgTe superlattice and
CdTe/ZnTe/GaAs heterojunctions
F. Yu 1003

Use of natural topaz as a transporting agent in the vapor
growth of potassium tungsten oxide bronze fibres
X. Miao 1008

Growth, etching, polarization and second harmonic gen-
eration of potassium lithium tantalate niobate crystals
Q. Guan, X. Hu, J. Wei, J. Wang, L. Tian, W. Cui and
Y. Liu 1012

JOURNAL OF
CRYSTAL GROWTH
VOL:200, NO:1-2, APRIL 1999

Classical semiconductors
Microgravity growth of GaSb single crystals by the
liquid encapsulated melt zone (LEMZ) technique
C.R. Lopez, J.R. Mileharn and R. Abbaschian 1

Thermal cleaning of air-exposed p-type InGaAs films
and CBE regrowth of carbon-doped inGaAs layers for
optical device applications
H. Sugiura, M. Mitsuhara, S. Kondo and Y. Suzaki 13

Morphology of homo-epitaxial vicinal (1 0 0) III-V sur-
faces

C.A. Verschuren, M.R. Leys, R.T.H. Rongen, H.
Vonk and J.H. Wolter 19

The improvement of GaN epitaxial layer quality by the
design of reactor chamber spacing
C.-C. Yang, G.-C. Chi, C.-K. Huang and M.-C. Wu 32

Growth and characterization of GaN by atomsphere
pressure metalorganic chemical-vapor deposition with
a novel separate-flow reactor
C.-C. Yang, C.-K. Huang, G.-C. Chi and M.-C. Wu 39

Investigation of two-dimensional growth of AIN(0 0 0 1)
on Si(l 1 1) by plasma-assisted molecular beam epitaxy
H.P.D. Schenk, G.D. Kipshidze, U. Kaiser, A. Fissel,
J. Krauplich, J. Schuize and Wo. Richter 45

Nitridation of sapphire substrate and its effect on the
growth of GaN layer at low temperature
J.-S. Paek, K.-K. Kirn, J.-M. Lee, D.-J. Kirn, M.-S. Yi,
D.Y. Noh, H.-G. Kirn and S.-J. Park 55

High quality GaN film growth on AIN buffer layer,
pretreated with alternating pulsative supply ofTMG and
NH3

J.S. Hwang, S. Tanaka, S. lwai, Y. Aoyagi and S.
Seong 63

Structural and optical characteristics of self-organized
InAs quantum dots grown on GaAs (3 1 1)A substrates
H. Xu, Q. Gong, B. Xu, W. Jiang, J. Wang, W. Zhou
and Z. Wang 70

Spontaneous lateral alignment of multistacked
lno.45Ga0.55As quantum dots on GaAs(3 1 1)B substrate
J.-S. Lee, M. Sugisaki, H.-W. Ren, S. Sugou and Y.
Masumoto 77
Formation and optical properties of InGaN/GaN nano-
structures grown on amorphous Si substrates by
MOCVD

J. Wang, M. Nozaki, M. Lachab, R.S. Qhalid Fareed,
Y. Ishikawa, T. Wang, Y. Naoi and S. Sakai 85

Growth and doping studies of CdTe epilayers on GaAs
substrates by low-pressure plasma-radical-assisted metal-
organic chemical vapor deposition
M. Niraula, T. Aoki, Y. Nakanishi and Y. Hatanaka 90

Bulk growth of InSb crystals for infrared device applica-
tions

P. Mohan, N. Senguttuvan, S.M. Babu, P. Santhana-
raghavan and P. Ramasamy 96

Structural and electrical properties of the arsenic
planar-doped Hg1-xCdxTe epilayers grown on p-
Cdo.96Zno.o4Te substrates
M.S. Han, T.W. Kang and T.W. Kirn 101

Growth of Si whiskers on Au/Si(l 1 1) substrate by gas
source molecular beam epitaxy (MBE)
J.L. Liu, S.J. Cai, G.L. Jin, S.G. Thomas and K.L.
Wang 106

Effect of chemical preparation of Si(l 1 1) surfaces on the
CaF2 growth

G. Breton, M. Nouaoura, X. Gratens, 0. Laire, F.
Touhari, S. Charar and M. Averous 112

Electronic materials

Microstructural control of NdBa2Cu3O7-delta super-
conducting oxide from highly undercooled melt by con-
tainerless processing

K. Nagashio, Y. Takamura, K. Kuribayashi and
Y.Shiohara 118

Multiply twinned C60 and C70 nanoparticles
B. Pauwels, D. Bernaerts, S. Amelinckx, G. Van
Tendeloo, J. Joutsensaari and E.L Kauppinen 126

Crystal growth of Cu(In1-xGax)3Se5 by horizontal
Bridgman method
H.P. Wang, W.W. Lam and 1. Shih 137
Fabrication and morphology of different color NbCx
whiskers
G.-Y. Xu, J.-B. Li, Y. Huang and Z.-P. Xie 143

Growth of pure and doped Rb2ZnCl4 and K2ZnCl4
single crystals by Czochralski technique
M. Stefan, S.V. Nistor, D.C. Mateescu and A.M.
Abakurnov 148

Flux growth of (Mg1-xrFex)SiO3 orthoenstatite crystals
T. Tanaka, H. Takei and C. Uyeda 155

Epitaxial Bi4Ti3O12 thin film growth using Bi self- limit-
ing function
S. Migita, H. Ota, H. Fujino, Y. Kasai and S. Sakai 161

Single-crystal growth of aluminum tungstate-scandium
tungstate solid solution samples by the modified Czoch-
ralski method
N. Imanaka, M. Hiraiwa. S. Tamura, G. Adachi, H.
Dabkowska and A. Dabkowski 169

Physical properties of Li2O-4B2O3 melt
X. Hong and K. Lu 172

Crystal growth and characterization of Eu2+
Dy3+:SrAL2O4 and Eu2+, Nd3+:CaAl2O4 by the
LHPG method
W. Jia, H. Yuan, L. Lu, H. Liu and W.M. Yen 179

Bulk periodic poled lithium niobate crystals doped with
Er and Yb
V. Bermudez, M.D. Serrano and E. Dieguez 185

Study of growth imperfections, optical absorption,
thermoluminescence and radiation hardness of CdWO4
crystals
S.C. Sabharwal and Sangeeta 191

Growth, morphology and laser performance of
Nd: YVO4 crystal
X. Meng, L. Zhu. H. Zhang, C. Wang, Y.T. Chow and
M. Lu 199

Three-dimensional numerical simulation of spoke pat-
tern in oxide melt
C.J. Jing, N. Imaishi, S. Yasuhiro and Y. Miyazawa 204

Solution growth; industrial, biological and molecular ersytalli-
zation

Calcite growth inhibition by copper(II). L Effect of
supersaturation
K.I. Parsiegia and J.L. Katz 213

Crystallisation of Ba(SO4, CrO4) solid solutions from
aqueous solutions
A. Fernandez-Gonzalez, R. Martin-Diaz and M.
Prieto 227
Nucleation and growth of calcium carbonate by an elec-
trochemical scaling process
C. Gabrielli, G. Maurin, G. Poindessous and
R. Rosset 236

The kinetics of desilication of synthetic spent Bayer
liquor seeded with cancrinite and cancrinite/sodalite
mixed-phase crystals
M.C. Barnes, J. Addai-Mensah and A.R. Gerson 251

Polar structure of lysozyme aggregates in unsaturated
solution determined by small-angle neutron scattering -
contrast variation method
N. Niimura, Y. Minezaki, L Tanaka, S. Fujiwara and
M. Ataka 265

General subjects

Spontaneous growth of singular morphology of a
comet-like fine particle
C. Kaito, H. Suzuki, S. lzuta, N. Tsuda, Y. Saito,
T. Nakada and S. Kimura 271

Selection mechanisms for multiple similarity solutions
for solidification and melting
S.R. Coriell, G.B. McFadden and R.F. Sekerka 276

The relationship between dendrite tip characteristics and
dendrite spacings in alloy directional solidification
B.J. Spencer and H.E. Huppert 287

On the Ternkin model of solid-liquid interface
A. Mori and I.L. Maksirnov 297

Morphological instabilities in rapid directional solidifi-
cations under local nonequilibrium conditions
S.-C. Lee, C.-C. Hwang, J.-Y. Hsieh and K.-Y. Lee 305

Letters to the Editors

Structural and optical characterization of InAs nano-
structures grown on high-index InP substrates
H. Li, T. Daniels-Race and Z. Wang 321

Nucleation of diamond in the system of carbon and
water under very high pressure and temperature
S.M. Hong, M. Akaishi and S. Yamaoka 326

A heat shield to control thermal gradients, melt convec-
tion, and interface shape during shouldering in Czoch-
ralski oxide growth
J.C. Rojo. E. Dieguez and J.J. Derby 329

Growth and laser properties of Yb:Ca4YO(BO3)3
crystal
H. Zhang, X. Meng, L. Zhu, P. Wang, X. Liu, R.
Cheng, J. Dawes, P. Dekker, S. Zhang and L. Sun 335

Regulation of the crystallization in a crucible furnace
B. Cabric, T. Pavlovic and A. Janicijevic 339

JORNAL OF CRYSTAL GROWTH
VOL:201-202,

Editors preface ix
SECTION 1. MBE TECHNOLOGY

How molecular beam epitaxy (MBE) began and its projection into the future
A.Y. Cho 1

Gas source molecular beam epitaxy as a multi-wafer epitaxial production technology
S. lzumi, Y. Kouji, N. Hayafuji and K. Sato 8

Focused ion molecular-beam epitaxy - a novel approach to 3D device fabrication using simultaneous p- and n-type doping
P.J.A. Sazio, S. Vijendran, W. Yu, H.E. Beere, G.A.C. Jones, E.H. Linfield and D.A. Ritchie 12

Noise, drift, and calibration in optical flux monitoring for MBE
A.W. Jackson, P.R. Pinsukanjana, A.C. Gossard and L.A. Coldren 17
In situ compositional control of advanced HgCdTe-based IR detectors
L.A. Almeida and J.H. Dinan 22

In situ real time monitoring of thickness and composition in MBE using alpha particle energy loss
M. Beaudoin, M. Adamcyk, Y. Levy, J.A. MacKenzie, S. Ritchie, T. Tiedje, Z. Gelbart, U. Giesen and 1. Kelson 26
Real-time control of the MBE growth of InGaAs on InP
J.A. Roth, D.H. Chow, G.L. Olson, P.D. Brewer, W.S. Williamson and B. Jobs 31

Optical pyrometry for in situ control of MBE growth of(Al,Ga)As1-x-,Sbx compounds on InP
K. Biermann, A. Hase and H. Kunzel 36

Feedback control of substrate temperature during the growth of near-lattice-matched inGaAs on inP using diffuse reflection
spectroscopy
S.R. Johnson, E. Grassi, M. Beaudoin, M.D. Boonzaayer, K.S. Tsakalis and Y.-H. Zhang 40

Imaging energy analyzer for RHEED: energy filtered diffraction patterns and in situ electron energy loss spectroscopy
P. Staib, W. Tappe and J.P. Contour 45

Phase-locked substrate rotation: new applications for RHEED in MBE growth
W. Braun, H. Moller and Y.-H. Zhang 50

SECTION II. VIRTUAL EPITAXY AND GROWTH MODELLING

Island nucleation and growth during homoepitaxy on GaAs(0 0 l)-(2 x 4)
D.D. Vvedensky. M. ltoh, G.R. Bell, T.S. Jones and B.A. Joyce 56
Mechanism of self-limiting epitaxial growth on nonplanar substrates
G. Biasiol and E. Kapon 62

Modelling of compound semiconductor epitaxy
Ch. Heyn, T. Franke and R. Anton 67
First-principles investigation of Ga adatom migration on a GaAs(l 1 1)A surface
A. Taguchi, K. Shiraishi and T. lto 73

Theory of adsorption and diffusion of Si adatoms on H/Si(l 0 0) stepped surface
J. Nara, T. Sasaki and T. Ohno 77

Surface segregation behavior of Ge in comparison with B, Ga, and Sb: calculations using a first-principles method
J. Ushio, K. Nakagawa, M. Miyao and T. Maruizurni 81

Evaporation and step edge diffusion in MBE
S. Schinzer, M. Sokolowski, M. Biehl and W. Kinzel 85

Activation energy for Ga diffusion on the GaAs(0 0 l)-(2 x 4) surface: an MBE-STM study
H. Yang, V.P. LaBella, D.W. Bullock, Z. Ding, J.B. Smathers and P.M. Thibado 88

Smoothing kinetics of CdTe(0 0 1) surfaces: indication for a step/terrace exchange barrier
H. Neureiter, S. Schinzer, M. Sokolowski and E. Umbach 93

Elastic interaction between defects on a surface
P. Peyla, A. Vallat and C. Misbah 97

Self-organized vicinal surfaces: a template for the growth of nanostructures
D. Martrou, P. Gentile and N. Magnea 101

SECTION III. IN-SITU STUDIES

In situ studies of III-V semiconductor film growth by molecular beam epitaxy
B.A. Joyce, D.D. Vvedensky, T.S. Jones, M. ltoh, G.R. Bell and J.G. Belk 106

In situ observation of reconstruction related surface stress during molecular beam epitaxy (MBE) growth of III-V
compounds
J.P. Silveira and F. Briones . 113

Atomic-level in situ real-space observation of Ga adatoms on GaAs(0 0 l)(2 x 4)-As surface during molecular beam epitaxy
growth
S.TsukamotoandN.Koguchi 118

SEM imaging of fundamental growth processes during MBE of GaAs on (I I 1)A substrates
H. Yamaguchi and Y. Homma 124

In situ monitoring of GaAs growth at high temperature by spectroscopic ellipsometry and desorption mass spectroscopy
W.T. Taferner, K. Mahalingam, D.L. Dorsey and K..G. Eyink 128

In situ reflectance difference spectroscopy: nitrogen-plasma doping of MBE grown ZnTe layers
D. Stifter, A. Bonanni, M. Garcia-Rocha, M. Schmid, K. Hingeri and H. Sitter 132

Surface characterization of III-V heteroepitaxial systems by laser light scattering
M.U. Gonzalez, J.A. Sanchez-Gil, Y. Gonzalez, L. Gonzalez, R. Garcia, A.S. Paulo and J.M. Garcia 137

Asymmetric behavior of monolayer holes after growth in GaAs molecular beam epitaxy revealed by in situ scanning electron
microscopy
K. Tanahashi, K. Kawamura, N. Inoue and Y. Homma 141

MBE growth and in situ electrical characterization of metal/semiconductor structures
L.C. Chen, D.A. Caldwell, T.A. Miiller, T.G. Finstad, W. Schildgen and C.J. Palmstr0m 146

SECTION IV. GROWTH OF LATTICE MATCHED MATERIALS

Advanced epitaxial growth techniques: atomic layer epitaxy and migration-enhanced epitaxy

Y. Horikoshi 150
Very high quality 2DEGS formed without dopant in GaAs/AIGaAs heterostructures

R.H. Harrell, J.H. Thompson, D.A. Ritchie, M.Y. Simmons, G.A.C. Jones and M. Pepper 159
An optimized digital alloy growth technique for accurate band gap engineering

W. GeiBelbrecht, U. Pfeiffer, A. Thi-anhardt, U. Kliltz, A.C. Gossard and G.H. D5hler 163
Surface structure transitions on (0 0 1) GaAs during MBE

V.V. Preobrazhenskii, M.A. Putyato, O.P. Pchelyakov and B.R. Semyagin 166
Experimental determination of the incorporation factor of As^ during molecular beam epitaxy of GaAs

V.V. Preobrazhenskii, M.A. Putyato, O.P. Pchelyakov and B.R. Semyagin 170
Arsenic-free high-temperature surface cleaning of molecular beam epitaxy (MBE)-grown AIGaAs layer with new passivation
structure

K. lizuka. H. Watanabe, T. Suzuki and H. Okamoto 174
Growth and structural characteristics of(Ga,AI)As Bragg reflectors grown by MBE on nominal and vicinal (] I 1)B GaAs
substrates

C. Guerret-Piecourt, C. Fontaine and A. Ponchet 178
Arsenic induced mass transport of GaAs on V-groove GaAs substrate

D. Martin, J. Robadey, F. Filipowitz, C. Gourgon and F.K. Reinhart 183
MBE growth of antiphase GaAs films using GaAs/Ge/GaAs heteroepitaxy

C.B. Ebert, L.A. Eyres, M.M. Fejer and J.S. Harris Jr. 187
Growth of Ge layers with high hole mobility on surface controlled AIAs by molecular beam epitaxy

T. Maeda and H. Tanaka 194
Re-entrant behaviour in GaAs(l I 1)A homoepitaxy

P.H. Steans. J.H. Neave, J. Zhang, E.S. Tok, G.R. Bell, B.A. Joyce and T.S. Jones 198
Heterojunction and interface space charge effects on interstitial Be diffusion during molecular beam epitaxy (MBE) growth

Y.-C. Pao 202
Electronic lifetime engineering using low-temperature GaAs in a quantum well structure

M. Stellmacher, V. Berger, C. Sirtori and J. Nagle 206
Behavior of arsenic precipitation in low-temperature grown III-V arsenides

M.N. Chang, K.C. Hsieh, T.-E, Nee, C.C. Chuo and J.-l. Chyi 212
Properties of C-doped LT-GaAs grown by MBE using CBr4

W.K. Liu, K. Bacher, F.J. Towner, T.R. Stewart, C. Reed, P. Specht, R.C. Lutz, R. Zhao and E.R. Weber 217
Superior molecular beam epitaxy (MBE) growth on (N 1 1)A GaAs
H. Shtrikman, Y. Hanein, A. Soibel and U. Meirav 221
MBE growth ofAIGaAs/GaAs heterostructure and silicon doping on GaAs(n 1 1)A (n = 1-4) substrates
T. Ohachi, J.M. Feng. K. Asai, M. Uwani, M. Tateuchi, P.O. Vaccaro and K. Fujita 226

Effect of Ga predeposition layer on the growth of GaAs on vicinal Ge(0 0 1)
A.K. Gutakovsky, A.V. Katkov, M.I. Katkov, O.P. Pchelyakov and M.A. Revenko 232

SECTION V. GROWTH OF LATTICE MISMATCHED MATERIALS

Van der Waals epitaxy for highly lattice-mismatched systems
A. Koma 236

Growth of InAsP/lnP quantum wells by solid source MBE on misoriented and exact InP (1 1 1)B: substrate temperature and
arsenic species effects
G. Dagnall, S.R. Stock and A.S. Brown 242

Material properties of InAIAs layers grown by MBE on vicinal (1 1 1)B in P substrates
A. Georgakilas, K. Michelakis, M. Kayambaki, K. Tsagaraki. E. Macarona, Z. Hatzopoulos, A. Vila, N. Becourt, F. Peiro,
A. Cornet, N. Chrysanthakopoulos and M. Calamiotou 248

Elastic relaxation phenomena in compressive Gao.2Ino.8As grown on (00 1) and (1 1 3)B inP at low lattice mismatch
D. Lacombe, A. Ponchet, S. Frechengues, V. Drouot, N. Bertru, B. Lambert and A. Le Corre 252

First-principles calculations on atomic and electronic structures of misfit dislocations in lnAs/GaAs(l 10) and
GaAs/lnAsd 10) heteroepitaxies
N. Oyama, E. Ohta, K. Takeda. K. Shiraishi and H. Yamaguchi 256

Ordered arrays of arsenic clusters coincided with InAs/GaAs superlattices grown by low-temperature MBE
V.V. Chaldyshev, N.N. Faleev, N.A. Bert, Yu.G. Musikhin, A.E. Kunitsyn, V.V. Preobrazhenskii, M.A. Putyato, B.R.
Semyagin and P. Werner 260

inAIAs buffer layers grown lattice mismatched on GaAs with inverse steps
Y. Cordier and D. Ferre 263

Interfacial deep-level defects as probes for ultrathin InAs insertions in GaAs
P. Krispin, J.-L. Lazzari and H. Kostial 267

Annealing effects on lattice-strain-relaxed Ino.5As/In0.5Gao.5As heterostructures grown on GaAs substrates
T. Mishima, M. Kudo, J. Kasai, K. Higuchi and T. Nakamura 271

Influence of high-index GaAs substrates on the growth of highly strained (lnGa)As/GaAs heterostructures
A, Polimeni, A. Patane. M. Henini. L. Eaves, P.C, Main, S. Sanguinetti and M. Guzzi 276

A gas-source MBE growth study of strained Gai-,ln,P layers on GaAs
0. Schuler, X. Wallart and F. Mollot 280

Indium surface segregation in strained GalnAs quantum wells grown on (1 1 1) GaAs substrates by MBE
X. Marcadet, A. Fily, S. Colirn. J.P. Landesman, M. Larive, J. Olivier and J. Nagle 284

SECTION VI. NITRIDES: GROWTH AND DEVICES

InGaN-based blue light-emitting diodes and laser diodes
S. Nakamura 290

Growth of Ill-nitrides on Si(l 1 1) by molecular beam epitaxy. Doping, optical, and electrical properties
E. Calle)a, M.A. Sanchez-Garcia, F.J. Sanchez, F. Calle, F.B. Naranjo, E. Munoz, S.I. Molina, A.M. Sanchez, F.J. Pacheco
and R. Garcia 296

Reactive MBE of group III nitrides: high-quality homoepitaxial GaN and ultra-violet light-emitting diodes
M. Mayer, A. Peizmann, H.Y. Chung, M. Kamp and K.J. Ebeling 318

GaN/GainN-based light emitting diodes grown by molecular beam epitaxy using NH3
N. Grandjean and J. Massies 323

MBE grown AIGaN/GaN MODFETs with high breakdown voltage
A. Vescan, R. Dietrich, A. Wieszt, H. Tobler, H. Leier, J.M. Van Hove, P.P. Chow and A.M. Wowchak 327

Layered compound substrates for GaN growth
A. Yamada, K.P. Ho, T. Akaogi, T. Maruyama and K. Akimoto 332

A new initial growth method for pure cubic GaN on GaAs(0 0 1)
H. Chen, H.-f. Liu, Z.-q. Li, S. Liu, Q. Huang, J.-m. Zhou and Y.-q. Wang 336

Growth and characterization of cubic AIGaN and AIN epilayers by RF-plasma assisted MBE
T. Koizumi, H. Okumura, K. Balakrishnan, H. Harima, T. Inoue, Y. Ishida, T. Nagatomo, S. Nakashima and S. Yoshida 341

Plasma-assisted MBE growth of GaN and InGaN on different substrates
V.V. Mamutin, S.V. Sorokin, V.N. Jmerik, T.V. Shubina, V.V. Ratnikov, S.V. lvanov, P.S. Kopev, M. Karlsteen, U.
Sodervall and M. Willander 346

Nitrogen incorporation rate. optima] growth temperature, and Asf^-flow rate in GainNAs growth by gas-source MBE using
N-radicals as an N-source
T. Kitatani, M. Kondow, K. Nakahara, M.C. Larson, Y. Yazawa, M. Okai and K. Uomi 351

Strain effect on the N composition dependence ofGaNAs bandgap energy grown on (0 01) GaAs by metalorganic molecular
beam epitaxy
K. Uesugi, N. Morooka and 1. Suemune 355

Epitaxial growth ofAJN and GaN on Si(l 1 1) by plasma-assisted molecular beam epitaxy
H.P.D. Schenk, G.D. Kipshi'dze, V.B. Lebedev, S. Shokhovets, R. Goldhahn, J. Krau)31ich, A. Fissel and Wo. Richter 359

Spatially resolved photoluminescence of laterally overgrown GaN
P. Gibart, B. Beaumont and Chua Soo-Jin 365

Very strong photoluminescence emission from GaN grown on amorphous silica substrate by gas source MBE
H. Asahi, K. lwata, H. Tampo, R. Kuroiwa, M. Hiroki, K. Asami, S. Nakamura and S. Gonda 371

Defect related persistent effects in MBE grown gallium nitride epilayers
C.V. Reddy, K. Balakrishnan, H. Okumura and S. Yoshida 376

Real-time control of the molecular beam epitaxy of nitrides
J. Massies and N. Grandj'ean 382

RHEED studies of the GaN surface during growth by molecular beam epitaxy
O.H. Hughes, T.S. Chena, S.V. Novikov, C.T. Foxon. D. Korakakis and NJ. Jeffs 388

Suppression of hexagonal GaN mixing by As„ molecular beam in cubic GaN growth on GaAs (0 0 1) substrates
A. Hashimoto, T. Motizuki. H. Wada, A. Masuda and A. Yamamoto 392

Growth of cubic InN on lnAs(00 1) by plasma-assisted molecular beam epitaxy
A.P. Lima, A. Tabata, J.R. Leite. S. Kaiser, D. Schikora, B. SchOttker, T. Frey, D.J. As and K. Lischka 396

Characterisation of an RF atomic nitrogen plasma source
D. Voulot, R.W. McCullough, W.R. Thompson, D. Burns, J. Geddes, GJ. Cosimini, E. Nelson, P.P. Chow and J. Klaassen 399

Enhancement of surface decomposition using supersonic beam: direct evidence from GaN quantum dot formations on
AIGaN surfaces in gas-source molecular beam epitaxy
X.Q. Shen, S. Tanaka, S. lwai and Y. Aoyagi 402

Structural properties of GaN epilayers directly grown on on-axis 6H-SiC(0 0 01) by plasma-assisted MBE
A. Trampert, 0. Brandt, B. Yang, B. Jenichen and K.H. Ploog 407

MBE ofAIN on SIC and influence of structural substrate defects on epitaxial growth
D.G. Ebling, M. Rattunde, L. Steinke. K.W. Benz and A. Winnacker 411

MBE growth of GaN and AIGaN layers on Si(] 1 1) substrates: doping effects
M.A. Sanchez-Garcia, E. CalleJa, F.B. NaranJo, F.J. Sanchez, F. Calle, E. Munoz, A.M. Sanchez, F.J. Pacheco and S.I.
Molina 415

Effects of rapid thermal annealing on GaInNAs/GaAs multiple quantum wells
H.P. Xin, K.L. Kavanagh, M. Kondow and C.W. Tu ' 419

Effect of the nucleation layer deposition temperature on the nature of defects in GSMBE GaN films
P. Vennegues, N. Grandjean, J. Massies and F. Semond 423

Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NHs cracked on the growing
surface
J.-P. Zhang, D.-Z. Sun, X.-B. Li, X.-L. Wang, M.-Y. Kong, Y.-P. Zeng, J.-M. Li and L.-Y. Lin 429

Buffer layers for the growth of GaN on sapphire by molecular beam epitaxy
R. Ebel, M. Fehrer, S. Figge, S. Einfeldt, H. Seike and D. Hommel 433

Growth evolution ofcubic-GaN on sapphire (0001) substrate by metalorganic molecular beam epitaxy
J. Suda, T. Kurobe and H. Matsunami 437

AIN on sapphire and on SIC: CL and Raman study
K. Kornitzer, W. Limmer, K. Thonke, R. Sauer, D.G. Ebling, L. Steinke and K.W. Benz 441

Epitaxial growth of GaN/Pd/GaN sandwich structure
U. Tanaka, T. Maruyama and K. Akimoto 444

SECTION VIL GROWTH OF II-VI COMPOUNDS
Growth of ZnSe-(Zn,Mg)(S,Se) superiattices by molecular beam epitaxy
M. Korn, D. Albert, J. NUrnberger and W. Faschinger 448

Molecular beam epitaxy of CdS/ZnSe heterostructures
S. Petillon, A. Dinger, M. Grun, M. Hetterich, V. Kazukaliskas, C. Klingshirn, J. Liang, B. Weise, V. Wagner and J. Courts 453

Chlorine doping of cubic CdS and ZnS grown by compound source molecular-beam epitaxy
M. GrUn, A. Storzum, M. Hetterich, A. Kamilli, W. Send, Th. Walter and C. Klingshirn 457

Peculiarities ofmigration-enhanced-epitaxy (MEE) versus molecular beam epitaxy (MBE) growth kinetics ofCdSe fractional
monolayers in ZnSe
S. Sorokin, T. Shubina, A. Toropov, 1. Sedova, A. Sitnikova, R. Zolotareva, S. lvanov and P. Kop'ev 461

CdTe epitaxial layers in ZnSe-based heterostructures
S. Rubini, B. Bonanni, E. Pelucchi, A. Franciosi, Y. Zhuang and G. Bauer 465

SIMS study of Al thermal diffusion in MBE-grown sandwiched-ZnSTe structures
Z.H. Ma, T. Smith and I.K. Sou 470

Homoepitaxy of ZnSe on the citric acid etched (1 0 0)ZnSe surface
M. Kobayashi, K. Wakao, S. Nakamura, A. Jia, A. Yoshikawa, M. Shimotornai, Y. Kato and K. Takahashi 474

Up-conversion effect of ZnSe-ZnTe superlattices with modulated periodicity
K. Watanabe, Y. Chikarayumi, 1. Tsubono, N. Kimura, K. Suzuki, T. Sawada and K. Imai 477

Cathodolliminescence study of molecular beam epitaxy (MBE) grown MgZnSSe and BeMgZnSe alloy based heterostruc-
tures

V.A. Solov'ev, S.V. Sorokin, I.V. Sedova, G.N. Mosina, S.V. lvanov, H.-J. Lugauer, G. Reuscher, M. Keim, A. Waag and
G. Landwehr 481

Formation of the charge balanced ZnSe/GaAs(l 1 0) interfaces by molecular beam epitaxy
K. Maehashi, N. Morota, Y. Murase, N. Yasui, A. Shikimi and H. Nakashima 486

Atomic layer epitaxy processes of ZnSe on GaAs(0 01) as observed by beam-rocking reflection high-energy electron
diffraction (RHEED) and total-reflection-angle X'-ray spectroscopy (TRAXS)
A. Ohtake, T. Hanada, K. Aral, T. Komura, S. Miwa, K. Kimura, T. Yasuda, C. Jin and T. Yao 490

Molecular-beam epitaxy of BeTe layers on GaAs substrates
E. Tournie, V. Bousquet and J.-P. Faurie 494

Investigations by high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) of(BeTe/ZnSe)
superlattices grown by molecular beam epitaxy onto GaAs buffer epilayer
V. Bousquet, M. Laugt, P. Vennegues, E. Tournie and J.-P. Faurie 498

Growth of ZnSe layers on Beta(2 x 4)As, (i x 3)Te, and (4 x 2)Ga-terminated (0 0 l)GaAs substrates
L. Carbonell, V.H. Etgens, A. Koebel, M. Eddrief and B. Capelle 502

Structural and optical properties of high-quality ZnTe grown on GaAs using ZnSe/ZnTe strained-layer superlattices buffer
layer
R.C. Tu, Y.K. Su, Y.S. Huang and F.R. Chien 506

Strain relaxation of ZnCdSe quantum wells grown on (2 I 1)B GaAs measured using the piezoelectric effect
J.S. Milnes, S.A. Telfer, C. Morhain. B. Urbaszek, K.A. Prior and B.C. Cavenett 510

Molecular-beam epitaxy of ZnxBe1-x-Se layers on vicinal Si(00 1) substrates
C. Chauvet, C. Guenaud, P. Vennegues, E. Tournie and J.P. Faurie 514

Two-dimensional growth mode promotion of ZnSe on Si(l 1 1) by using a nitrogen substrate surface treatment
V.H. Mendez-Garcia and M. Lopez-Lopez 518

Molecular beam epitaxy (MBE) in situ high-temperature annealing of HgCdTe
L. He, S.L. Wang, J.R. Yang, M.F. Yu, Y. Wu, X.Q. Chen, W.Z. Fang, Y.M. Qiao, Y. Gui and J. Chu 524

SECTION VIII. GROWTH OF Si AND GROUP IV COMPOUNDS

Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers
C.S. Peng, H. Chen, Z.Y. Zhao, J.H. Li, D.Y. Dai, Q. Huang, J.M. Zhou, Y.H. Zhang, C.H. Tung, T.T. Sheng and J. Wang 530

Optical Er-doping of Si during sublimational molecular beam epitaxy
B.A. Andreev, A.Yu. Andreev, H, Ellmer, H. Hutter, Z.F. Krasil'nik, V.P. Kuznetsov, S. Lanzerstorfer, L. Palmetshofer, K.
Piplits, R.A. Rubtsova, N.S. Sokolov, V.B. Shmagin, M.V. Stepikhova and E.A. Uskova 534

Surfactant-mediated growth of Ge/Si(00 1) studied by Raman spectroscopy and TEM
G. Brill, D.J. Smith, D. Chandrasekhar, Y. Gogotsi, A. Prociuk and S. Sivananthan 538

Surface morphology evolutions during the first stages of epitaxial growth of Si on Ge(0 0 1): a RHEED study
D. Dentel, J.L. Bischoff, L. Kubler and J. Faure 542

Influence of misfit and threading dislocations on the surface morphology of SiGe graded-layers
B. Gallas, J.M. Hartmann, 1. Berbezier, M. Abdallah, J. Zhang, J.J. Harris and B.A. Joyce 547

Influence of crystal perfection on the reverse leakage current of the SiGe/Si p-n heterojunction diodes
X.F. Liu, J.P. Liu, J.P. Li, Y.T. Wang, L.Y. Li, D.Z. Sun, M.Y. Kong and L.Y. Lin 551

Strain-induced morphological evolution and preferential interdiffusion, in SiGe epitaxial film on Si(l 0 0) during high-
temperature annealing
J.P. Liu, M.Y. Kong, X.F. Liu, J.P. Li, D.D. Huang, L.X. Li and D.Z. Sun 556

Ge concentration dependence of Sb surface segregation during SiGe MBE
K. Nakagawa, N. Sugii, S. Yamaguchi and M. Miyao 560

The effects of carbonized buffer layer on the growth of SiC on Si
Y.S. Wang, J.M. Li, F.F. Zhang and L.Y. Lin 564

SECTION IX. IN-SITU ETCHING, SELECTIVE EPITAXY, REGROWTH

Atomic layer in situ etching and MBE regrowth
K. Eberi, M. Lipinski and H. Schuler 568

Extension of the epitaxial shadow mask MBE technique for the monolithic integration and in situ fabrication of novel device
structures
U. Hilburger, W. Fix, R. Mayer, W. GeiBelbrecht, S. Malzer, P. Veiling, W. Prost, FJ. Tegude and G.H. Dohler 574
Patterned substrate overgrowth for optoelectronic device integration using chemical beam epitaxy (CBE)
P.J. Poole, R.L. Williams, C. Lacelle, V. Gupta, J.W. Fraser, B. Lamontagne and M. Buchanan 578

Minimizing interface contamination in MBE overgrowth
R. Hey, M. Wassermeier, M. HOricke, E. Wiebicke and H. Kostial 582

Selective area regrowth of n-GaAs with reduced interface carrier depletion using arsenic passivation
C. Heinlein, J.K. Grepstad, B.-O. Firnland and T. Berge 586

Selective growth on facets and in situ mask removal for regrowth
K. Shiralagi, R. Zhang and R. Tsui 590

In situ cleaning of air-exposed InGaAs using trisdimethylaminoarsine for CBE regrowth aimed at optical devices
H. Sugiura, M. Mitsuhara, S. Kondo and K. Tsuzuki 594
In situ lateral structuring during II-VI MBE growth with Al50Ga50As-GaAs shadow masks

C. Schumacher, W. Faschinger, V. Hock, H.R. ReB, J. Niirnberger and M. Ehinger 599
Maskless selective area molecular beam epitaxy of semittonductors and metals using atomic step networks on silicon

P. Finnic and Y. Homma 604
Maskless selective epitaxy of ln,Gai-,As using low-energy Ino.15Gao.85-FIB and As4 molecular beam
D.H. Cho, M. Hachiro, Y. Abe and K. Pak 610

Kinetics of AsCIs chemical beam etching of GaAs(0 0 1), (I I ])A and (I I 1)B surfaces
J.L. Guyaux, J.-M. Ortion, Y. Cordier, M. Kappers, E. Chirhas and J.-Ch. Garcia 614

Self-organized MBE growth of II-VI epilayers on patterned GaSb substrates
H. Wissmann, T.T. Anh, S. Rogaschewski and M. von Ortenberg 619

Potential barrier formed at n-ZnSe regrowth homointerface by molecular beam epitaxy
Y. Yamagata, T. Sawada, K. Imai and K. Suzuki 623

SECTION X. OXIDES

Growth of high-quality epitaxial ZnO films on Alpha-(Al2O3)
P. Fons, K. lwata, S. Niki, A. Yamada and K. Matsubara 627

Formation of amorphous native oxides by very-low-temperature molecular beam epitaxy and water vapor oxidation
K.L. Chang, L.J. Chou, K.C. Hsieh, D.E. Wohlert, G.W. Pickrell and K.Y. Cheng 633

Molecular-beam epitaxy of InAs on anodized GaAs substrates
Y. Morishita, T. Saitoh and S. Kawai 638

Lattice mismatched molecular beam epitaxy on compliant GaAs/AI,OJ./GaAs substrates produced by lateral wet oxidation
D. Lubyshev, T.S. Mayer, W.-Z. Cai and D.L. Miller 643

Improvement of the surface morphology of the epitaxial GAMA-Al2O3 films on Si(l 1 1) grown using template growth with
different temperatures by Al solid and N2O gas source molecular beam epitaxy (MBE)
Y.-C. Jling, H. Miura and M. Ishida 648

Electrical characterization of Al2O3 on Si from thermally oxidized AIAs and A]
C.C. Liao, A. Chin and C. Tsai (,51

Nanofabrication of heavily doped p-type GaAs and n-type InGaP by atomic force microscope (AFM)-based surface
oxidation process
Y. Matsuzaki, K.-i. Yuasa. J.-i. Shirakashi, E.K. Chilla, A. Yamada and M. Konagai 656 SECTION XI. MAGNETIC COMPOUNDS

Ferromagnet/semiconductor hybrid structures grown by molecular-beam epitaxy
M. Tanaka 660

Ferromagnetic transition in II-VI semimagnetic QWs
J. Cibert, P. Kossacki, A. Haury, D. Ferrand, A. Wasiela, Y. Merle d'Aubigne, A. Arnoult, S. Tatarenko and T. Dietl 670

Microstructure formation during MnAs growth on GaAs(0 0 1)
F. Schippan, A. Trampert, L. Daweritz, K.H. Ploog, B. Dennis, K.U. Neumann and K.R.A. Ziebeck 674

Low-temperature molecular beam epitaxial growth of GaAs and (Ga,Mn)As
A. Shen, F. Malsukura, S.P. Guo. Y. Sugawara, H. Ohno, M. Tani, H. Abe and H.C. Liu 679

InAs and (ln,Mn)As nanostructures grown on GaAs(l 0 0), (2 1 1)B, and (3 1 1)B substrates
S.P. Guo, A. Shen, F. Matsukura, Y. Ohno and H. Ohno 684

Tunneling spectroscopy and tunneling magnetoresistance in (GaMn)As ultrathin heterostructures
T. Hayashi, H. Shimada, H. Shimizu and M. Tanaka 689

Epitaxial growth of magnetic Mn2Sb1-xAsx thin films on (0 0 l)GaAs
S. Miyanishi, H. Akinaga, W. Van Roy and K. Tanaka 693

Low-temperature MBE growth of GaAs on magnetic metal substrates
W. Van Roy, H. Akinaga and S. Miyanishi 698

Fe/GaAs(00 1) and Fe/GaSb(0 0 1) heterostructures: epitaxial growth and magnetic properties
B. Lepine, C. Lallaizon, S. Ababou, A. Guivarch, S. Deputier, A. Filipe, F.N.V. Dau, A. Schuhl, F. Abel and C. Cohen 702

In situ characterization of the growth dynamics in molecular beam epitaxy (MBE) of Mn-based II-VI compounds:
self-organized Mn structures on CdTe
A. Bonanni, D. Stifter, K. Hingeri, H. Seyringer and H. Sitter 707

Semimagnetic II-VI heterostructures for resonant tunneling
M. Keim, U. Lunz, C.Y. Hu, U. Zehnder, W. Ossau, A. Waag and G. Landwehr 711

n- And p-type modulation doping of Te related semimagnetic II-VI heterostructures
A. Arnoult, D. Ferrand, V. Huard, J. Cibert, C. Grattepain, K. Saminadayar, C. Bourgognon, A. Wasiela and S. Tatarenko 715

Spatial distribution of Fe in selectively metalorganic MBE regrown device structures as determined by laterally resolved
SIMS
P. Harde, R. Gibis, R. Kaiser, H. Kizuki and H. Klinzel 719

Influence of a facetted surface on the epitaxial growth and properties of a magnetic thin film
F.N.V. Dau. M. Sussiau, P. Galtier, A. Encinas and A. Schuhl 723

SECTION XII. ELECTRON DEVICES AND MODULATION DOPING

Pressure and Hall sensors: what does MBE allow to do?
J.L. Robert, S. Contreras, J. Sicart, V. Mosser and F. Kobbi 727

Strain relieved SiGe buffers for Si-based heterostructure field-effect transistors
T. Hackbarth, G. Hoeck, H.-J. Herzog and M. Zeuner 734

MBE grown selective recess structures for microwave and millimeter-wave power PHEMTs
Y.-C. Pao, K. Tran, J. Franklin and M. Bailey 739

GSMBE grown Ino.^Gao.^P/dnIGaAs/GaAs high hole mobility transistor structures
J.X. Chen, A.Z. Li, Q.K. Yang, C. Lin, Y.C. Ren, S.R. Jin, M. Qi, H.G. Xu and X.J. Chen 744

Very high electron mobilities at low temperatures in ln,Gai-,As/ln„Ali-„As HEMTs grown lattice-mismatched on GaAs
substrates
S.-i. Gozu, K. Tsuboki, M. Hayashi, C. Hong and S. Yamada 749

High-mobility electron systems in remotely-doped InSb quantum wells
K.J. Goldammer, S.J. Chung, W.K. Liu, M.B. Santos, J.L. Hicks, S. Raymond and S.Q. Murphy 753

Optimization of layer structure for InGaAs channel pseudomorphic HEMTs
J.L. Pearson, M.C. Holland, C.R. Stanley, A.R. Long, E. Skuras, A. Asenov and J.H. Davies 757

Ultrashort FETs formed by GaAs/AIGaAs MBE regrowth on a patterned & doped GaAs layer
T.M. Burke, M.L. Leadbeater, E.H. Linfield, N.K. Patel, D.A. Ritchie and M. Pepper 761

Magneto-resistance effect in inSb thin film grown using molecular beam epitaxy
A. Okamoto, T. Yoshida, S. Muramatsu and 1. Shibasaki 765

Ohmic versus rectifying contacts through interfacial dipoles: AI/ln,Gai-.,As
C. Marinelli, L. Sorba, B.H. Miiller, D. Kumar, D. Orani, S. Rubini, A. Franciosi, S. De Franceschi, M. Lazzarino and
F. Beltram 769
GaAs/Alo.4Ga0.6As triple barrier resonant tunneling diodes with (4 1 1)A super-flat interfaces grown by MBE
K. Shinohara, Y. Shimizu. S. Shimomura and S. Hiyamizu 773

Vertical transport properties through pseudo-metallic InAs thin films grown on GaAs (I I 1)A substrates
H. Yamaguchi and Y. Hirayama 778

Modulation doped structure with thick strained inAs channel beyond the critical thickness
T. Nakayama and H. Miyamoto 782

Intrinsic modulation doping in InP-based structures: properties relevant to device applications
LA. Buyanova, W.M. Chen. W.G. Bi, Y.P. Zeng and C.W. Tu 786

Coupled double parabolic quantum wells grown with the analogue technique
S. Bargstadt-Franke, Ch. Heyn, W. Hansen and D. Heitmann 790

Lateral inhomogeneities in engineered Schottky barriers
S. Heun, T. Schmidt, J. Siezak, J. Diaz, K.C. Prince, B.H. Miiller and A. Franciosi 795

Dependencies of low-temperature electronic properties of MBE-grown GaAs/AIGaAs single heterojunctions upon arsenic
species
S. Yamada. J. Okayasu, S. Gozu, C.U. Hong and H. Hori 800

SECTION XIIL QUANTUM WIRES

Magneto-optical studies of GaAs/AIGaAs T-shaped quantum wire structures fabricated by cleaved edge overgrowth
L. Sorba, G. Schedelbeck. W. Wegscheider, M. Bichler, G. Bohm and G. Abstreiter 805

Selective molecular beam epitaxy (MBE) growth of GaAs/AIAs ridge structures containing 10 nm scale wires and side
quantum wells (QWs) and their stimulated emission characteristics
S. Koshiba, S. Watanabe, Y. Nakamura, M. Yamauchi, M. Yoshita, M. Baba, H. Akiyama and H. Sakaki 810

Uniform quantum wire and quantum dot arrays by atomic hydrogen assisted (MBE) on patterned high-index substrates: role
of atomic hydrogen in natural self-faceting
R. Notzel, H.-P. Schonherr. Z. Niu, L. Daweritz and K.H. Ploog 814

Organised growth on vicinal surfaces: segregation and disorder effects
F. Laruelle. A. Cavanna, F. Leiarge, Z.Z. Wang and B. Etienne 819

In0.15Gao.85As/GaAs quantum wire structures grown on (5 5 3}B GaAs substrates by molecular beam epitaxy
S. Hiyamizu, Y. Ohno, M. Higashiwaki and S. Shimomura 824

Fabrication of uniform InGaAs/GaAs quantum wires on V-grooved substrate by chemical beam epitaxy
S.-B. Kirn, J.-R. Ro, K.-W. Park and E.-H. Lee 828

Quasi-quantum-wire field-effect transistor fabricated by composition-controlled, selective growth in molecular beam epitaxy
T. Sugaya, T. Takahashi. T. Nakagawa, M. Ogura and Y. Sugiyama 833

SECTION XIV. ANTIMONIDES: LASERS AND GROWTH

Room temperature continuous wave operation under optical pumping of a 1.48 microm vertical cavity laser based on AIGaAsSb
mirror
J.C. Harmand, G. Ungaro, 1. Sagnes. J.P. Debray, B. Sermage, T. Rivera, C. Meriadec, J.L. Oudar, R. Raj, F.
Olivier-martin, C. Kazmierski and R. Madani 837

1.5 microrn Ga(AI)Sb laser grown on GaAs substrate by MBE
J. Koeth, T. Bleuel, R. Werner and A. Forchel 841

Growth and operation tolerances for Sb-based mid-infrared lasers
C.H. Grein, M.E. Flatte and H. Ehrenreich 844

Arsenic incorporation in molecular beam epitaxy (MBE) grown (AIGaln)(AsSb) layers for 2.0-2.5 nm laser structures on
GaSb substrates
S. Sjmanowski, M. Walther, J. Schmitz, R. Kiefer, N. Herres, F. Fuchs, M. Maier, C. Mermelstein, J. Wagner and G.
Weimann 849

AlxIni-xAs1-ySby/GaSb effective mass superlattices grown by molecular beam epitaxy
D. Washington-Stokes, T.P. Hogan, P.C. Chow, T.D. Golding, U. Kirschbaum, C.L. Littler and R, Lukic 854

Composition control of GaSbAs alloys
A. Bosacchi, S. Franchi, P. Allegri, V. Avanzini, A. Baraldi, R. Magnanini, M. Berti, D. De Salvador and S.K. Sinha 858

X-ray diffraction study of InAs/AISb interface bonds grown by molecular beam epitaxy
A. Sato, K. Ohtani, R. Terauchi, Y. Ohno, F. Matsukura and H. Ohno 861

Compositional abruptness at the InAs-on-GaSb interface: optimizing growth by using the Sb desorption signature
R. Kaspi
Study of interfaces in GalnSb/lnAs quantum wells by high-resolution X-ray diffraction and reciprocal space mapping
D.H. Tomich, W.C. Mitchel, P. Chow and C.W. Tu 868

Optical properties of GaAso.5Sbo.5 and Ino.53Gao.47As/GaAso.5Sbo.5 type II SINGLE hetero-structures lattice-matched to InP
substrates grown by molecular beam epitaxy
A. Yamamoto, Y. Kawarnura, H. Naito and N. Inoue 872

SECTION XV. III-V LASERS, EXCEPT Sb COMPOUNDS

Solid source molecular beam epitaxy growth of 600-nm-range quantum well laser diodes
M. Toivonen, P. Savolainen, S. Orsila, V. VUokkinen, M. Pessa, P. Corvini, F. Fang, R.F. Nabiev and M. Jansen 877
63% wallplug efficiency MBE grown InGaAs/AIGaAs broad-area laser diodes and arrays with carbon p-type doping using
CBr4
R. Jager, J. Heerlein, E. Deichsel and P. Unger 882
GaAs/(GaAs)4(AIAs)2 quantum wire lasers grown on (7 7 5)B-oriented GaAs substrates by molecular beam epitaxy
M. Higashiwaki, S. lkawa, S. Shimomura and S. Hiyamizu 886

Epitaxially stacked GaAs/GaAlAs lasers using a low-resistance tunnel junction
J.Ch. Garcia, E. Rosencher, Ph. Collot, N. Laurent, J.L. Guyaux, J. Nagle and E. Chirlias 891

1.3 microm InAsP p-type modulation doped MQW lasers grown by gas-source