MICROELECTRONICS RELIABILITY
VOLUME 39, NUMBER 3 , MARCH 1999
CONTENTS
T. Ushiki, M.-C. Yu, K. Kawai, 327 Gate oxide reliability concerns in gate-metal sputtering deposition
T. Shinohara, K. Ino, M. Morita and process: an effect of low-energy large-mass ion bombardment
T. Ohmi
A. Bandyopadhyay,S. Subramanian, 333 Degradation of InGaAs/lnP single heterojunction bipolar transistors under
S. Chandrasekhar, A. Dentai and high energy electron irradiation
S. M. Goodnick
D. Pogany and G. Guillot 341 Random telegraph signal noise instabilities in lattice-mismatched
inGaAs/lnP photodiodes
T. Yoshida, S. Hashimoto, 347 Texture and electromigration lifetime improvements in layered Al-alloy
Y. Mitsushima, T. Ohwaki and Y. Taga metallization with underlying Ti by controlling water adsorption on 8102
substrates
H.-C. Lin, C.-C. Chen, M.-F. Wang, 357 Oxide thickness dependence of plasma charging damage
S.-K. Hsien, C.-H. Chien, T.-Y. Huang
and C.-Y. Chang
Y. Wu and G. Lucovsky 365 Improvement of gate dielectric reliability for p+poly MOS devices using
remote PECVD top nitride deposition on ultra-thin (2.4-6 nm) gate oxides
N. A. Dumin 373 A new algorithm for transforming exponential current ramp breakdown
distributions into constant current TDDB space, and the implications for
gate oxide QBD measurement methods
C. T. Tsai and L. L. Liou 383 Dislocation dynamics in heterojunction bipolar transistor under current
induced thermal stress
U. Daya Perera 391 Evaluation of reliability of (mo )BGA solder joints through twisting and
bending
D. M. Tanner, W. M. Miller, 401 Frequency dependence of the lifetime of a surface micromachined
K. A. Peterson, M. T. Dugger, microengine driving a load
W. P. Eaton, L. W. Irwin, D. C. Senft,
N. F. Smith, P. Tangyunyong and
S. L Miller
M.-D. Ker, T.-Y. Chen and H.-H. Chang 415 New layout design for submicron CMOS output transistors to improve
driving capability and ESD robustness
425 Book reviews
431 Calendar of forthcoming events
___________________________
MICROELECTRONICS RELIABILITY
VOLUME 39, NUMBER 4 , APRIL 1999
CONTENTS
S. Dimitrijev, P. Tanner and 441 Slow-trap profiling of NO and N^O nitrided oxides grown on Si and SIC
H. B. Harrison substrates
C.-H. Jun, Y. Hong, S. Y. Kim, 451 A simulation-based semiconductor chip yield model incorporating a new
K.-S. Park and H. Park defect cluster index
P. G. Han, H. Wong and M. C. Poon 457 Physical structure of light-emitting porous polycrystaUine silicon thin films
M. Amagai 463 Chip Scale Package (CSP) solder joint reliability and modeling
A. Arshak, D. McDonagh, K. l. Arshak, 479 Process characterisation of hot-carrier-induced ß degradation in bipolar
D. Doyle and I. Harrow transistors for BiCMOS
M. A. Imarn, M. A. Osman and 487 Threshold voltage model for deep-submicron fully depleted SOI MOSFETs
A. A. Osman with back gate substrate induced surface potential effects
V. S. Pershenkov, S. V. Cherepko, 497 Single transistor technique for interface trap density measurement in
R. E. lvanov, A. V. Shainov and irradiated MOS devices
V. V. Abrarnov
S. Domae, R. Eto and K. Okuma 507 Stress-induced voiding in stacked tungsten via structure
L. R. Enlow, D. W. Swanson and 515 Development of test vehicles for evaluating plastic-encapsulant reliability
C. M. Naito and improving thermal conductivity of encapsulant materials
L. M. Head and C. Fahrenkrug 529 Voltage transients in electromigration noise measurement data
R. Balboni, l. de Munari, M. Impronta 537 Additional microstructural analysis on the samples examined in the paper
and A. Scorzoni Are high resolution resistometric methods really useful for the early
detection of electromigration damage?'
K. Takagi 541 A model of 1/f noise spectrum generation in granular structures
545 Book reviews
549 Erratum
__________________________________________
MICROELECTRONICS RELIABILITY
VOLUME 39, NUMBER 5 , MAY 1999
CONTENTS
N. Stojadinovtcand M. Pecht 551 Editorial
Introductory Invited Papers
C.-Y. Chang, C.-C. Chen, H.-C. Un, 553 Reliability of ultrathin gate oxides for ULSI devices
M.-S, Liang, C.-H. Chien and
T.-Y, Huang
D. Park and C. Hu 567 The prospect of process-induced charging damage in future thin gate
oxides
J, C- Lee, G. D. Croft, J. J. Liou. 579 Modeling and measurement approaches for electrostatic discharge in
W, R. Young and J- Bernier semiconductor devices and ICs: an overview
SPECIAL SECTION: EU RESEARCH PROJECT PROPHECY PAPERS
E. Zanoni 595 Foreword
G. Ghibaudo, G. Pananakakis, R. Kies 597 Accelerated dielectric breakdown arid wear out standard testing methods
E. Vincent and C. Papadas and structures for reliability evaluation of thin oxides
A.Scorzoni, M. Impronta, I. DeMunari 615 A proposal for a standard procedure for moderately accelerated electro-
and F. Fantini migration tests on metal lines
N. Kelaidis, A. Scorzoni, M. Impronta 627 A study of the thermal behavior of different test patterns used in differential
and I. De Munari high resolution electrornigration measurements
G.Meneghesso, E. Zanoni, A. Gerosa, 635 Test structures and testing methods for electrostatic discharge: results of
P. Ravan, W. Stadler, K. Esmark and PROPHECY project
X.Guggenmos
K. Palser, A.- Concannon, R. Duffy and 647 Analysis of external latch-up protection test structure design using
A. Mathewson numerical simulation
H. Rempp.O. Thalau, A. Scorzoni, 661 Experiences on reliability simulation in ths framework of the PROPHECY
G. Ghilbaudo, E, Vincent and project
S, Minehane
Research Papers
S. Aur, T. Grider, V. McNeil, 673 Remote plasma nitridation, deuterium anneal and pocket implant effects
T. Holloway and R, Ekiund on NMOS hot carrier reliability
E, I. Cole Jr, P. Tangyunyong and 681 Local thermal probing to detect open and shorted IC interconnections
D, L Barton
C.-L Chiang 695 Water level backside emission microscopy: dynamics and effects
C.-L Chiang 709 Water level backside emission microscopy: sample preparation
V.A.Gritsenko,Y.G.Shavalgin, 715 Cathodoluminoscence and photoluminescence of amorphous silicon
P, A. Pundur, H. Wong and W. M. Lau oxynitnde
719 Book review
__________________________________________
MICROELECTRONICS RELIABILITY
VOLUME 39, NUMBER 2 , FEBRUARY 1999
CONTENTS
G. Sarrabayrouse 159 Guest Editorial
SECTION 1: ELECTRICAL PROPERTIES AND RELIABILITY OF INSULATING LAYERS
E. Miranda, J. Sune, R. Rodriguez, 161 Switching events in the soft breakdown I-t characteristic of ultra-thin 8102
M. Nafria and X. Ayrnerich layers
D. Goguenheim, A. Bravaix, 165 Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-
D. Vuillaume, F. Mondon, thick SiO(2) oxides
Ph. Candelier, M. Jourdain and
A. Meinertzhagen
J. C.Jackson, 0. Oralkan,D.J.Dumin 171 Electric breakdowns and breakdown mechanisms in ultra-thin silicon
and G. A. Brown oxides
P. Bellutti, N. Zorzi and G. Verzellesi 181 Gate oxide reliability improvement related to dry local oxidation of silicon
P. Temple-Boyer, F. Olivie, E. Scheid, 187 Breakdown properties of metal/NIDOS SiOz/silicon structures
G. Sarrabayrouse, J. L. Alay and
J. R. Morante
A. Meinertzhagen, C.Petit, 191 On positive charge annihilation and stress-induced leakage current
M. Jourdain, F. Mondon and decrease
D. Gogenheim
A. Scarpa, B. De Salvo, G. Ghibaudo, 197 On the correlation between SILC and hole fluence throughout the oxide
G. Pananakakis, A. Paccagnella and
G. Ghidini
P. Riess, G. Ghibaudo, G. Pananakakis 203 Measurement and modeling of the annealing kinetics of stress induced
and J. Brini leakage current in ultra-thin oxides
S.Bruyere, E.Vincent and G. Ghibaudo 209 Stress-induced leakage current in very thin dielectric layers: some
limitations to reliability extrapolation modeling
A. S. Spinelli, A. L. Lacaita, D. Minelli 215 Analysis of space and energy distribution of stress-induced oxide traps
and G. Ghidini
M. Ceschia, A. Paccagnella, A. Scarpa, 221 Total dose dependence of radiation-induced leakage current in ultra-thin
A. Cester and G. Ghidini gate oxides
A. Candelori, A. Paccagnella, 227 Degradation of electron irradiated MOS capacitors
A. Scarpa, G. Ghidini and P. G. Fuochi
B. De Salvo, G. Ghibaudo, 235 ONO and NO interpoly dielectric conduction mechanisms
G. Pananakakis and G. Reimbold
SECTION II: NON-SIUCON-BASED INSULATORS
G. Vein and G. Remiens 241 Dielectric and ferroelectric properties of Perovskite Pb(Zr, 11)03 films
deposited by sputtering on Si substrate
C. Legrand, T. Haccart, G. Velu, 251 Dielectric characterization of ferroelectric thin films deposited on silicon
D. Chambonnet, D. Remiens,
L. Burgnies, F, Mehr! and J. C. Carru
C. Schmidt and E. P. Burte 257 MOCVD of ferroelectric thin films
C. Chaneliere, S. Four, J. L. Autran and 261 Comparison between the properties of amorphous and crystalline TazOs
R. A. B. Devine thin films deposited on Si
J. V. Manca, M. Nesladek, M. Neelen, 269 High electrical resistivity of CVD-diamond
C. Quaeyhaegens, L. De Schepper and
W. De Ceuninck
SECTION III: INSULATORS TECHNOLOGY, CHARACTERIZATION AND MODELLING
A. Esteve, M. D. Rouhani and D. Esteve 275 Modelling methodology of silicon oxidation from quantum calculations to
Monte Carlo level
A. Courtot-Descharles, F. Pires, 279 Density functional theory applied to the calculation of dielectric constant
P. Paillet and J. L. Leray of low-k materials
D. Davazoglou and V. Em. Vamvakas 285 Optical dispersion analysis within the IR range of thermally grown and
TEOS deposited 8102 films
0. Buiu, S. Taylor, L. Culiuc, 291 Optical characterization of ion implantation in Si and Si/Si02 structures:
M. Gärtner and I. Cernica spectroellipsometric (SE) and second harmonic generation (SHG) results
R. Beyer, H. Burghardt, E. Thomas, 297 A study of the interface states in MIS-structures with thin 3102 and SiO^N^
R. Reich, D. R. T. Zahn and T. Geßner layers using deep level transient spectroscopy
C. Vahlas, V. Em. Vamvakas and 303 Low pressure chemical vapor deposition from TEOS-NHs mixtures:
D. Davazoglou thermochemical study of the process considering kinetic data
A. J. Bauer, B. Froeschle, M. Beichele 311 Characterization of oxide etching and wafer cleaning using vapor phase
and H. Ryssel anhydrous hydrofluoric acid and ozone
F. Qian, G. Temmel, R. Schnupp and 317 Thin stoichiometric silicon nitride prepared by r.f. reactive sputtering
H. Ryssel
325 List of reviewers
_______________________________________
MICROELECTRONICS RELIABILITY
VOL. 39 , NO. 6-7 , 1999
Editorial
N. LABAT, A. TOUBOUL ix
TUTORIALS
FLIP-chip and "backside" techniques 721
D,L BARTON, K. BERNHARD-HOFER, E.I, COLE JR.
New tools for yield improvement in integrated circuit manufacturing: can they be applied to
reliability? 731
CJ. McDONALD
TOPIC A: QUALITY AND RELIABILITY
Invited Paper
Reliability versus yield and die location in advanced VLSI 741
W.C. RIORDAN, R< MILLER, J, HICKS
Junction parameters for silicon devices characterization 751
M. DE LA BARDONNIE, N. TOUFIK, C. SALAMI S. DIB, P, MIALHE, A. HOFFMANN,
J.-P. CHARLES
Assessment of worst case dielectric failure rate based on statistical samples with pure intrinsic failure
distributions 755
M. KERBER
New rapid method for lifetime determination of gate oxide validated with bipotar/CMOS/DMOS
technology 759
X. GAGNARD, M. TAURIN, 0. BONNAUD
A universal reliability prediction model for SMD integrated circuits based on field failures 765
G, KERVARREC, M.L MONFORT, A. RIAUDEL, P,Y, KLIMONDA, J.R. COUDRIN,
D. LE RAZAVET, J.Y. BOULAIRE, P, JEANPIERRE, D. PERIE, R. MEISTER, S, CASASSA,
J.L HAUMONT, B. LIAGRE
TOPIC B: MODELLING OF FAILURE MECHANISMS: ESD, ELECTROMIGRATION, OXIDE AND MOS
invited Paper
Influence of pulsed DC current stress on electromigration results in AfCu interconnections; analysis
of thermal and healing effects 773
L ARNAUD, G, REIMBOLD, P. WALTZ
Modelling hot-carrier degradation of LDD NMOSFETs by using a high-resolution measurement
technique 785
R, DREESEN, K. CROES, J, MANCA, W. DE CEUNINCK, L DE SCHEPPER, A. PERGOOT,
G. GROESENEKEN
Model for the oxide thickness dependence of SILC generation based on anode hole injection process 791
C. JAHAN, S. BRUYERE, G. GHIBAUDO, E. VINCENT, K, BARLA
Study of stress induced leakage current by using high resolution measurements 797
B. DE SALVO, G. GHIBAUDO, G. PANANAKAKIS, B. GUILLAUMOT, G. REIMBOLD
Modelling of the temperature and electric field dependence of substrate/gate current SILC with an
elastic resonant trap assisted tunnelling mechanism 803
P- RIESS, G. GHIBAUDO, G. PANANAKAKIS
Temperature dependence of hot carrier induced MOSFET degradation at low gate bias 809
S.H. HONG, S.M. NAM, B.O- YUN, BJ. LEE, C,G. YU, J.T PARK
Temperature acceleration of breakdown and quasi-breakdown phenomena in ultra-thin oxides 815
S. BRUYERE, D. ROY, E. VINCENT, G- GHIBAUOO
Trapping mechanisms in negative bias temperature stressed p-MOSFETs 821
C. SCHLONDER, R. BREDERLOW, P. WIECZOREK, C. DAHL, J, HOLZ, M. ROHNER, S. KESSEL,
V. HEROLD, K. GOSER, W, WEBER, R, THEWES
Depassivation of latent plasma damage in pMOS devices 827
L PANTISANO, A, PACCAGNELLA, P. COLOMBO, M.G, VALENTINI
Extended SPICE-like model accounting for layout effects on snapback phenomenon during ESD
events 833
P. SALOME, C. RICHIER, S. ESSAIFI, C. LEROUX,I. ZAZA, A. JUGE, P, MORTINI
HBM and TLP ESD robustness in smart-power protection structures 839
S- SANTIROSI, G. MENEGHESSO, L NOVARINI, C, CONTIERO, E. ZANONI
Wafer mapping of ESD performance 845
J,C. REINER, H^U.SCHRODER, M. BENDER
Ageing of laser crystallized and unhydrogenated pofysilicon thin film transistors 851
A, RAHAL, T MOHAMMED-BRAHIM. H, TOUTAH, B. TALA-IGHIL, Y, HELEN, C. PRAT,
F RAOULT
A stochastic approach to failure analysis in electromigration phenomena 857
C, PENNETTA, L REGGIANI, G. TREFAN, F. FANTINI, I, DE MUNARI, A. SCORZONI
New latchup mechanism in complementary bipolar power ICs triggered by backside die attach glue 863
JA VAN DER POL, J.-P.F. HUIJSER, R,B.H. BASTEN
Hot-hole-induced interface states build-up on deep-submicrometer LDD nMOSFETs 869
J.M, RAFL F. CAMPABADAL
Transient induced latch-up triggered by very fast pulses 875
D. BONFERT, H, GIESER
Extraction and evolution of Fowler-Nordheim tunneling parameters of thin gate oxides under
EEPROM-like dynamic degradation 879
S, CROCI, J.M. VOISIN, C. PLOSSU, C RAYNAUD, J.L AUTRAN, P. BOIVIN, J.M. MIRABEL
Leakage current variation during two different modes of electrical stressing in undoped hydrogenated
n-channel polysilicon thin film transistors (TFTs) 885
FV, FARMAKIS, J. BRINI, G, KAMARINOS, CA DIMITRIADIS, V.K, GUEORGUIEV, TE, IVANOV
ModeMndependent determination of the degradation dynamics of thin SiO(2) films 891
FL RODRiGUEZ, M. NAFRiA, E, MIRANDA, J, SUNE, X. AYMERICH
Reliability improvement of EEPROM by using WSi (2) polycide gate 897
K. OGIER-MONNIER, P, BOIVIN, 0. BONNAUD
Mercury-probe characterisation of soft breakdown: effect of oxide thickness and measurement set-up 903
A. CACCIATO, S. EVSEEV
TOPIC C: ELECTRON AND OPTICAL BEAM TESTING
invited Paper
Advanced failure detection techniques in deep submicron CMOS integrated circuits 909
A. RUBIO, J. ALTET, D, MATEO
Fault localisation in ICs by goniometric laser probing of thermal induced surface waves 919
S, DILHAIRE, J. ALTET, S, JOREZ, E. SCHAUB, A. RUBIO, W. CLAEYS
Laser interferometric method for ns-time scale thermal mapping of smart power ESD protection
devices during ESD stress 925
C. FORBOCK, M. LITZENBERGER, D, POGANY, E. GORNIK, N SELIGER, T. MOLLER-LYNCH,
M. STECHER, H, GOSSNER, W. WERNER
Validation of radiation hardened designs by pulsed laser testing and SPICE analysis 931
V, POUGET, D. LEWIS, H. LAPUYADE, R. BRIAND, P. FOUILLAT, L SARGER, M.-C. CALVET
Front- and backside investigations of thermal and electronic properties of semiconducting devices 937
G,B,M, FIEGE, W, SCHADE, M. PALANIAPPAN, V. NG, J^H. PHANG, LJ. BALK
A new AFM-based tool for testing dielectric quality and reliability on a nanometer scale 941
A. OLBRICH, B, EBERSBERGER, C, BOIT, J. VANCEA, H. HOFFMANN
Sub-surface analyses of defects in integrated devices by scanning probe acoustic microscopy 947
R.M. CRAMER,V. BILETZKI, P. LEPIDIS, LJ, BALK
Quantitative high frequency-electric force microscope testing of monolithic microwave integrated
circuits at 20 GHz 951
V, WITTPAHL, C, NEY, LL BEHNKE, W- MERTIN, E, KUBALEK
Laser beam backside probing of CMOS integrated circuits 957
S- KASAPI, C.-C. TSAO, K. WILSHER, W. LO, S. SOMANI
Electron beam testing of FPGA circuits 963
R. DESPLATS, P. PERDU, B. BENTEO, A. GRANGY
Voltage contrast measurements on sub-micrometer structures with an electric force microscope
based test system 969
U. BEHNKE, B. WAND, W. MERTIN, E. KUBALEK
A new bifunctional topography and current probe for scanning force microscope testing of integrated
circuits 975
S. BAE, K. SCHIEMANN, W. MERTIN, E. KUBALEK. M. MAYWALD
Optical method for the measurement of the thermomechanical behaviour of electronic devices 981
S, DILHAIRE, S- JOREZ, A. CORNET, E. SCHAUB, W. CLAEYS
TOPIC D: ADVANCED FAILURE ANALYSIS TECHNIQUES
Cross-section analysis of electric devices by scanning capacitance microscope 987
Y. TAKASAKI, T, YAMAMOTO
TIVA and SEI developments for enhanced front and backside interconnection failure analysis 991
E.I. COLE JR. P. TANGYUNYONG, DA BENSON, D.L BARTON
Enhancing IC'repairs by combining laser direct-writing of Cu and FIB techniques 997
J. REMES, K MOILANEN, S. LEPPAVUORI
FIB voltage contrast measurement for enhanced circuit repairs 1003
R. DESPLATS, B, BENTEO, P. PERDU
Improved SRAM failure diagnosis for process monitoring via current signature analysis 1009
M. SCHIENLE, T ZANON, D. SCHMITT-LANDSIEDEL
Failure analysis method by using different wavelengths lasers and its application 1015
S. ITO, Y. TANDO
Defect localization using voltage contrast I^Q testing 1021
P, PERDU, R, DESPLATS
2D physical simulation of degradation on transistors induced by FIB exposure of dielectric
passivation 1027
J. BENBRIK, G. ROLLAND, D, MEUNIER, B, BENTEO, N. LABAT, C. MANEUX, Y. DANTO
TOPIC E: RELIABILITY OF COMPOUND SEMICONDUCTORS
Invited Paper
Physics of degradation in GaAs-based heterojunction bipolar transistors 1033
T- HENDERSON
Gold removal in failure analysis of GaAs-based laser diodes 1043
M. VANZI, A. BONFIGUO, P. SALARIS, P. DEPLANO, E.F, TROGU, A. SERPE, G. SALMINI,
R. DE PALO
Evaluation of P-HEMT MMIC technology PH25 for space applications 1049
P. HUGUET, P, AUXEMERY, G. PATAUT, F. GARAT
Degradation of AIGaAs/GaAs power HFETs under on-state and off-state breakdown conditions 1055
D. DIECI, G. SOZZL R- MENOZZI, C, LANZIERI, A. CETRONIO, C. CANALI
Effects of RF life-test on LF electrical parameters of GaAs power MESFETs 1061
N.SAYSSET-MALBERT,B, LAMBERT, C. MANEUX, N. LABAT, A. TOUBOUl, Y, DANTO,
LKJ. VANDAMME, P, HUGUET, P. AUXEMERY, F. GARAT
A simpler method for life-testing laser diodes 1067
M. VANZI, G. MARTINES, A. BONFIGUO, M. LICHERI, R. D'ARCO, G. SALMINI, R. DE PALO
Cathodoluminescence from hot electron stressed InP HEMTs 1073
P. COVA, G, MENEGHESSO, G, SALVIATI. E. ZANONI
TOPIC F: PACKAGING, ASSEMBLIES AND MICROSYSTEMS
invitee Paper
Impact of FEM simulation on reliability improvement of packaging 1079
K.WEIDE
1/f noise in conductive adhesive bonds under mechanical stress as a sensitive and fast diagnostic
tool for reliability assessment 1089
LKJ. VANDAMME, M.G. PERICHAUD, E. NOGUERA, Y, DANTO, U, BEHNER
Localization of defects in die-attach assembly by continuous wavelet transform using scanning
acoustic microscopy 1095
L BECHOU, L ANGRISIANI, Y. OUSTEN, D, DALLET, H. LEVI, P. DAPONTE, Y, DANTO
Quality and mechanical reliability assessment of wafer-bonded micromechanical components 1103
M. PETZOLD. J, BAGDAHN, D, KATZER
Contact resistance anomalies of vias before breakdown in accelerated current life tests 1109
W.LF. GOLZ
TOPIC G: POWER DEVICES
Invited Paper
Physical limits and lifetime limitations of semiconductor devices at high temperatures 1113
W. WONDRAK
Invited Paper
Device reliability and robust power converter development 1121
N, KESKAR, M- TRIVEDI, K. SHENAI
Lifetime extrapolation for IGBT modules under realistic operation conditions 1131
M, CIAPPA, P, MALBERTI. W. FICHTNER, P. COVA, L CATTANI. F. FANTINI
Long term reliability testing of HV-IGBT modules in worst case traction operation 1137
L FRATELLI, B. CASCONE, G. GIANNINI, G, BUSATTO
Damage analysisJn smart-power technology electrostatic discharge (ESD) protection devices 1143
D, POGANY, N. SELIGER, M. LITZENBERGER, K GOSSNER, M. STECHER, T MOLLER-LYNCH,
W. WERNER, E. GORNIK
Thermal characterization of power devices by scanning thermal microscopy techniques 1149
G.B.M, FIEGE, F.-J. NIEDERNOSTHEIDE, H.-J. SCHULZE, R. BARTHELMESS, LJ, BALK
Reliability and lifetime evaluation of different wire bonding technologies for high power IGBT
modules 1153
A. HAMIDI, N. BECK, K. THOMAS, E, HERR
Reliability of AIN substrates and their solder joints in tGBT power modules 1159
G. MITIC, R. BEINERT, P. KLOFAC, HJ. SCHULTZ, G. LEFRANC
Power cycling on press-pack IGBTs: measurements and thermomechanical simulation 1165
P. COVA, G. NICOLETTO, A, PIRONDI, M. PORTESINE, M. PASQUALETTI
Author Index I
_______________________________________